Plastic-Encapsulate Transistors
FEATURES
•
Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
•
Complements to 2SB1132
2SD1664
(NPN)
Maximum Ratings (
Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Tstg
Value
40
32
5
1
Unit
V
V
V
A
W
1. BASE
2. COLLECTO
3. EMITTER
0.5
150
-55to +150
SOT-89
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless otherwise specified)
Test
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=100mA
I
C
=0.5A, I
B
=50mA
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
150
15
82
conditions
Min
40
32
5
0.5
0.5
390
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1