Plastic-Encapsulate Transistors
FEATURES
•
Small flat package.
•
Low saturation voltage VCE(sat)=-0.5V
•
High speed switching time
•
PC=1.0 to 2.0W
•
Complementary to 2SA1213
2SC2873
(NPN)
Maximum Ratings (
Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Tstg
Value
50
50
5
2
0.5
1
(1)
Unit
V
1. BASE
V
2. COLLECTO
SOT-89
V
A
W
3. EMITTER
150
-55to +150
Note (1):Mounted on a ceramic substrate(250mm2*0.8t)
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
unless otherwise specified)
Test conditions
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=1A,I
B
=50mA
I
C
=1A,I
B
=50mA
V
CE
=2V,I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
120
30
70
20
0.5
1.2
V
V
MHz
pF
Min
50
50
5
0.1
0.1
240
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
MO
Y
120-240
MY
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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