Plastic-Encapsulate Transistors
FEATURES
•
Low saturation voltage, typically VCE (sat) =0.1V at
IC/IB =1A /50mA.
•
Excellent DC current gain characteristics.
•
Complements the 2SA1797.
2SC4672
(NPN)
Maximum Ratings (
Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tstg
Value
60
50
6
2
Unit
V
1. BASE
V
2. COLLECTO
SOT-89
V
A
W
3. EMITTER
0.5
-55to +150
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
unless otherwise specified)
Test
conditions
Min
Typ
Max
Unit
V
V
V
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
I
C
=
50
μA,I
E
=0
I
C
=
1
mA,I
B
=0
I
E
=
50
μA,I
C
=0
V
CB
=
60
V,I
E
=0
V
EB
=
5
V,I
C
=0
V
CE
=
2
V,I
C
=
0.5
A
I
C
=
1
A,I
B
=
50
mA
V
CE
=
2
V,I
C
=
500
mA,f=
100
MHz
V
CB
=
10
V,I
E
=0,f=
1
MHz
60
50
6
0.1
0.1
82
270
0.35
210
25
μA
μA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
80-180
KDP
Q
120-270
DKQ
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
嵌入式系统
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