Plastic-Encapsulate Transistors
FEATURES
Power dissipation
B772
(PNP)
Marking
:
772
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tstg
Value
-40
-30
-6
-3000
500
-55-150
Unit
V
V
V
mA
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
unless otherwise specified)
Test
conditions
Min
-40
-30
-6
-1
-10
-1
60
400
-0.5
-1.5
80
V
V
MHz
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
=-100μA ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100μA,I
C
=0
V
CB
= -40V, I
E
=0
V
CE
=-30V, I
B
=0
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
I
C
=-2A, I
B
= -0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V, I
C
=-0.1A
f =10MHz
CLASSIFICATION
OF
HFE
R
60-120
O
100-200
Y
160-320
GR
200-400
Rank
Range
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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