Plastic-Encapsulate Transistors
FEATURES
Collector-Base Voltage
Complement to 2SC945
2SA733
(PNP)
MARKING
:
CS
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-60
-50
-5
-0
.15
0.2
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE(on)
f
T
C
ob
NF
Test
conditions
Min
-60
Typ
Max
Unit
V
V
V
I
C
= -5uA,I
E
=0
I
C
= -1mA ,
I
B
=0
-50
-5
I
E
= -50uA, I
C
=0
V
CB
= -60 V ,
V
EB
= -5 V ,
I
E
=0
I
C
=0
-0.1
-0.1
120
-0.18
-0.58
50
4.5
6
7
20
-0.62
475
-0.3
-0.68
uA
uA
V
CE
= -6 V, I
C
= -1mA
I
C
= -100mA, I
B
=- 10mA
V
CE
=-6V,I
C
=-1.0mA
V
CE
=-6V,I
C
=-10mA
V
CB
=-10V,I
E
=0,f=1MH
Z
V
CE
=-6V,I
C
=-0.3mA,
Rg=10kΩ,f=100H
Z
V
V
MHz
pF
dB
CLASSIFICATIONOF h
FE
Rank
Range
L
120-220
H
220-475
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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