SS12F-SS120F
SCHOTTKY BARRIER RECTIFIER
FEATURES
For surface mounted applications
Metal silicon junction, majority carrier conduction
Built-in strain relief, ideal for automated placement
Low power loss, high efficiency.
High forward surge current capability
Plastic package has Underwriters Laboratory
SMAF
Flammability Classification 94V-0
10
MECHANICAL DATA
Cathode
Case: SMAF Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight:
27mg
(approx.)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or
inductive load.For capacitive load, derate current by 20%
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Half
Sine-wave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage at 1A
Maximum DC Reverse Current
Cat Rated DC Blocking
Voltage
@ T
A
=25°C
@ T
A
=100°C
Symbol
SS
12F
20
14
20
SS
13F
30
21
30
SS
14F
40
28
40
SS
15F
50
35
50
SS
16F
60
42
60
1.0
30.0
SS
18F
80
56
80
SS
110F
SS
115F
SS
120F
Unit
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
R
θJA
T
J
T
STG
100
70
100
150
105
150
200
140
200
0.45
0.55
0.5
10.0
110
0.70
0.85
0.95
0.2
V
mA
mA
pF
°C/w
°C
°C
5.0
90
88
-50 to +150
-50 to +150
2.0
Typical Junction Capacitance(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
1
/
3
SS12F-SS120F
SCHOTTKY BARRIER RECTIFIER
Typical Characteristics
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
24
0.6
18
0.4
12
0.2
SS12F-SS16F
SS18F-SS120F
6
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
50
T
J
=25 C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10.0
10
TJ=100 C
1
1
TJ=75 C
0.1
0.1
SS12F-SS14F
SS15F-SS16F
SS18F-SS115F
SS120F
0.01
TJ=25 C
0.001
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
JUNCTION CAPACITANCE, pF
FIG. 5-TYPICAL JUNCTION CAPACITANCE
400
200
T
J
=25 C
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
20
1
SS12F-SS14F
SS15F-SS120F
2
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
2
/
3
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
