Plastic-Encapsulate Transistors
FEATURES
Power dissipation
D882
(NPN)
Marking
:
882
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tstg
Value
40
30
6
1500
500
-55-150
Unit
V
V
V
mA
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
unless otherwise specified)
Test
conditions
Min
40
30
6
1
10
1
60
32
0.5
1.5
50
V
V
MHz
400
Typ
Max
Unit
V
V
V
µA
µA
µA
I
C
= 100μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 30V, I
B
=0
V
EB
= 6V, I
C
=0
V
CE
=2V, I
C
= 1A
V
CE
=2V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V ,
f =10MHz
Ic=0.1A
CLASSIFICATION
OF
HFE
R
60-120
O
100-200
Y
160-320
GR
200-400
Rank
Range
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
嵌入式系统
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