Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9015
S9014
(NPN)
MARKING
:
J6
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
5
0.1
0.2
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Test
conditions
I
E
=0
Min
50
45
5
Typ
Max
Unit
V
V
V
I
C
= 100
μ
A,
I
C
= 0.1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=50 V ,
V
CE
=35V ,
V
EB
= 3V ,
V
CE
=5V,
I
E
=0
I
B
=0
I
C
=0
I
C
= 1mA
0.1
0.1
0.1
200
1000
0.3
1
150
u
A
u
A
u
A
I
C
=100 mA, I
B
= 5mA
I
C
=100 mA, I
B
= 5mA
V
CE
=5V,
I
C
= 10mA
V
V
MHz
f
T
f=
30MHz
CLASSIFICATION OF
h
FE
L
200-450
H
450-1000
Rank
Range
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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