OPA317/2317/4317
350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
•
•
•
•
•
•
•
•
Single-Supply Operation from +1.8V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 350KHz (Typ. @25°C)
Low Input Bias Current: 20pA (Typ. @25°C)
Low Offset Voltage: 10uV (Max. @25°C)
Quiescent Current: 25µA per Amplifier (Typ)
Operating Temperature: -45°C ~ +125°C
Zero Drift: 0.05µV/°C (Typ)
•
•
Embedded RF Anti-EMI Filter
Small Package:
OPA317 Available in SOT23-5, SC70-5 and SOP-8
Packages
OPA2317 Available in SOP-8, MSOP-8 and DFN-8
Packages
OPA4317 Available in SOP-14 and TSSOP-14
Packages
General Description
The OPAx317 amplifier is single/dual/quad supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer
bandwidth of 350 kHz, rail-to-rail inputs and outputs, and single-supply operation from 1.8V to 5.5V. OPAx317 uses chopper
stabilized technique to provide very low offset voltage (less than 10µV maximum) and near zero drift over temperature. Low
quiescent supply current of 25µA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low
offset, low power consumption and high impedance applications.
The OPA317 is available in SOT23-5, SC70-5 and SOP8 packages. And the OPA2317 is available in SOP8, MSOP8 and DFN-8
packages. The OPA4317 Quad is available in Green SOP-14 and TSSOP-14 packages. The extended temperature range of
-45 C to +125 C over all supply voltages offers additional design flexibility.
o
o
Applications
•
•
•
Transducer Application
Temperature Measurements
Electronics Scales
•
•
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
OPA317
OPA317
OPA2317
OPA4317
OPA2317
OUTA
INA-
INA+
VSS
1
2
3
4
MSOP-8/SOP-8
8 VDD
7 OUTB
6 INB-
5 INB+
Figure 1. Pin Assignment Diagram
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1
2018 APR
OPA317/2317/4317
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-55°C
+260°C
)
125°C/W
216°C/W
190°C/W
Min
-0.5V
Vss-0.5V
Vss-0.5V
-45°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
SOP-8, θ
JA
MSOP-8, θ
JA
SOT23-5, θ
JA
ESD Susceptibility
HBM
MM
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
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℃
Package Thermal Resistance (T
A
=+25
6KV
400V
2
2018 APR
OPA317/2317/4317
Electrical Characteristics
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode
(CMRR)
Large Signal Voltage Gain ( A
VO
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
Rejection
Ratio
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
R
L
=10Ω to - V
S
4.998
4.994
5
20
20
30
V
V
mV
mV
mA
mA
Output Voltage Low (V
OL
)
Short Circuit Limit (I
SC
)
Output Current (I
O
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
Quiescent Current (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
V
S
= 2.5V to 5.5V
V
O
= 0V, R
L
= 0Ω
115
25
dB
µA
G = +100
R
L
= 10kΩ
350
0.2
KHz
V/µs
0Hz to 10Hz
f = 1kHz
1.1
70
µV
P-P
nV
/
Hz
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3
2018 APR
℃
℃
(At Vs=5V, TA = +25
, VCM = VS/2, RL = 10KΩ, unless otherwise noted.)
CONDITIONS
MIN
TYP
MAX
UNITS
2
20
10
V
CM
= 0V to 5V
R
L
= 10kΩ, V
O
= 0.3V to 4.7V
110
145
50
10
µV
pA
pA
dB
dB
nV/
OPA317/2317/4317
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Large Signal Transient Response
C
L
=0pF
G=+1
Large Signal Transient Response
C
L
=0pF
G=+1
Time(40µs/div)
Output Voltage (50mV/div)
Output Voltage (1V/div)
Time(4µs/div)
Positive Overvoltage Recovery
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
Negative Overvoltage Recovery
Output Voltage (50mV/div)
Time (50µs/div)
Time (50µs/div)
Open Loop Gain, Phase Shift vs. Frequency
Phase Shift
Open Loop Gain (dB)
Supply Current (µA)
Supply Current vs. Temperature
V
S
=5.5V
Open Loop Gain
V
s
=1.8V
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4
℃
Frequency (Hz)
Temperature ( )
±
±
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET
to
GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
2018 APR
OPA317/2317/4317
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Output Voltage Swing vs.Output Current at +3V
Sourcing Current
Output Voltage (V)
Output Voltage (V)
Output Voltage Swing vs.Output Current at +5V
Sourcing Current
125
Sinking Current
Output Current(mA)
Output Current(mA)
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5
℃
Sinking Current
℃ ℃
125
℃
℃ ℃
25
-40
25
-40
2018 APR
微控制器 MCU
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