L293D/L293DD
PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES
600mA OUTPUT CURRENT CAPABILITY
PER CHANNEL
1.2A PEAK OUTPUT CURRENT (non repeti-
tive) PER CHANNEL
ENABLE FACILITY
OVERTEMPERATURE PROTECTION
LOGICAL ”0” INPUT VOLTAGE UP TO 1.5 V
(HIGH NOISE IMMUNITY)
INTERNAL CLAMP DIODES
DESCRIPTION
The Device is a monolithic integrated high volt-
age, high current four channel driver designed to
accept standard DTL or TTL logic levels and drive
inductive loads (such as relays solenoides, DC
and stepping motors) and switching power tran-
sistors.
To simplify use as two bridges each pair of chan-
nels is equipped with an enable input. A separate
supply input is provided for the logic, allowing op-
eration at a lower voltage and internal clamp di-
odes are included.
This device is suitable for use in switching appli-
cations at frequencies up to 5 kHz.
BLOCK DIAGRAM
SO(12+4+4)
Powerdip (12+2+2)
ORDERING NUMBERS:
L293DD
L293D
The L293D is assembled in a 16 lead plastic
packaage which has 4 center pins connected to-
gether and used for heatsinking
The L293DD is assembled in a 20 lead surface
mount which has 8 center pins connected to-
gether and used for heatsinking.
http://www.hgsemi.com.cn
1
2018 AUG
L293D/L293DD
ABSOLUTE MAXIMUM RATINGS
Symbol
V
S
V
SS
V
i
V
en
I
o
P
tot
T
stg
, T
j
Supply Voltage
Logic Supply Voltage
Input Voltage
Enable Voltage
Peak Output Current (100
µ
s non repetitive)
Total Power Dissipation at T
pins
= 90
°
C
Storage and Junction Temperature
Parameter
Value
36
36
7
7
1.2
4
– 40 to 150
Unit
V
V
V
V
A
W
°
C
PIN CONNECTIONS
(Top view)
SO(12+4+4)
Powerdip(12+2+2)
THERMAL DATA
Symbol
R
th j-pins
R
th j-amb
R
th j-case
Decription
Thermal Resistance Junction-pins
Thermal Resistance junction-ambient
Thermal Resistance Junction-case
max.
max.
max.
DIP
–
80
14
SO
14
50 (*)
–
Unit
°
C/W
°
C/W
(*) With 6sq. cm on board heatsink.
http://www.hgsemi.com.cn
2
2018 AUG
L293D/L293DD
ELECTRICAL CHARACTERISTICS
(for each channel, V
S
= 24 V, V
SS
= 5 V, T
amb
= 25
°
C, unless
otherwise specified)
Symbol
V
S
V
SS
I
S
Parameter
Supply Voltage (pin 10)
Logic Supply Voltage (pin 20)
Total Quiescent Supply Current
(pin 10)
V
i
= L ; I
O
= 0 ; V
en
= H
V
i
= H ; I
O
= 0 ; V
en
= H
V
en
= L
I
SS
Total Quiescent Logic Supply
Current (pin 20)
V
i
= L ; I
O
= 0 ; V
en
= H
V
i
= H ; I
O
= 0 ; V
en
= H
V
en
= L
V
IL
V
IH
I
IL
I
IH
V
en L
V
en H
I
en L
I
en H
V
CE(sat)H
V
CE(sat)L
V
F
t
r
t
f
t
on
t
off
(*) See fig. 1.
Test Conditions
Min.
V
SS
4.5
Typ.
Max.
36
36
Unit
V
V
mA
mA
mA
mA
mA
mA
V
V
V
µA
µA
V
V
V
µA
µA
V
V
V
ns
ns
ns
ns
2
16
44
16
16
– 0.3
6
24
4
60
22
24
1.5
V
SS
7
– 10
Input Low Voltage (pin 2, 9, 12,
19)
Input High Voltage (pin 2, 9,
12, 19)
Low Voltage Input Current (pin
2, 9, 12, 19)
High Voltage Input Current (pin
2, 9, 12, 19)
Enable Low Voltage
(pin 1, 11)
Enable High Voltage
(pin 1, 11)
Low Voltage Enable Current
(pin 1, 11)
High Voltage Enable Current
(pin 1, 11)
Source Output Saturation
Voltage (pins 3, 8, 13, 18)
Sink Output Saturation Voltage
(pins 3, 8, 13, 18)
Clamp Diode Forward Voltage
Rise Time (*)
Fall Time (*)
Turn-on Delay (*)
Turn-off Delay (*)
V
SS
≤
7 V
V
SS
> 7 V
V
en L
= 1.5 V
2.3 V
≤
V
en H
≤
V
SS
– 0.6 V
I
O
= – 0.6 A
I
O
= + 0.6 A
I
O
= 600nA
0.1 to 0.9 V
O
0.9 to 0.1 V
O
0.5 V
i
to 0.5 V
O
0.5 V
i
to 0.5 V
O
V
SS
≤
7 V
V
SS
> 7 V
V
IL
= 1.5 V
2.3 V
≤
V
IH
≤
V
SS
– 0.6 V
2.3
2.3
30
– 0.3
2.3
2.3
– 30
100
1.5
V
SS
7
– 100
±
10
1.4
1.2
1.3
250
250
750
200
1.8
1.8
http://www.hgsemi.com.cn
3
2018 AUG
L293D/L293DD
TRUTH TABLE (one channel)
Inpu t
H
L
H
L
Enable (*)
H
H
L
L
Output
H
L
Z
Z
Figure 1:
Switching Times
Z = High output impedance
(*) Relative to the considered channel
Figure 2:
Junction to ambient thermal resistance vs. area on board heatsink (SO12+4+4 package)
http://www.hgsemi.com.cn
4
2018 AUG
模拟电子
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