HG277/HG2277/HG4277
HG277/HG2277/HG4277
High Precision Operational Amplifiers
1 Features
1
•
•
•
•
•
•
•
•
•
Ultralow Offset Voltage: 10
μV
Ultralow Drift: ±0.1
μV/°C
High Open-Loop Gain: 134 dB
High Common-Mode Rejection: 140 dB
High Power Supply Rejection: 130 dB
Low Bias Current: 1-nA maximum
Wide Supply Range: ±2 V to ±18 V
Low Quiescent Current: 800
μA/amplifier
Single, Dual, and Quad Versions
HGx277 series operational amplifiers operate from
±2-V to ±18-V supplies with excellent performance.
Unlike most operational amplifiers which are specified
at only one supply voltage, the HGx277 series is
specified for real-world applications; a single limit
applies over the ±5-V to ±15-V supply range. High
performance is maintained as the amplifiers swing to
their specified limits. Because the initial offset voltage
(±20
μV
maximum) is so low, user adjustment is
usually not required. However, the single version
(HG277) provides external trim pins for special
applications.
HG277 operational amplifiers are easy to use and
free from phase inversion and the overload problems
found in some other operational amplifiers. They are
stable in unity gain and provide excellent dynamic
behavior over a wide range of load conditions. Dual
and quad versions feature completely independent
circuitry for lowest crosstalk and freedom from
interaction, even when overdriven or overloaded.
Device Information
(1)
PART NUMBER
HG277
HG2277
PACKAGE
VSON (8)
SOIC (8)
PDIP (8)
HG4277
SOIC (14)
PDIP (14)
BODY SIZE (NOM)
4.00 mm × 4.00 mm
3.91 mm × 4.90 mm
6.35 mm × 9.81 mm
3.91 mm × 8.65 mm
6.35 mm × 19.30 mm
2 Applications
•
•
•
•
•
•
•
Transducer Amplifiers
Bridge Amplifiers
Temperature Measurements
Strain Gage Amplifiers
Precision Integrators
Battery-Powered Instruments
Test Equipment
3 Description
The HGx277 series precision operational amplifiers
replace the industry standard HG-177. They offer
improved noise, wider output voltage swing, and are
twice as fast with half the quiescent current. Features
include ultralow offset voltage and drift, low bias
current, high common-mode rejection, and high
power supply rejection. Single, dual, and quad
versions have identical specifications, for maximum
design flexibility.
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
0.1 Hz to 10 Hz Noise
Noise signal is bandwidth limited to
lie between 0.1Hz and 10Hz.
50nV/div
1s/div
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1
2018 AUG
HG277/HG2277/HG4277
4 Pin Configuration and Functions
HG277 P and D Packages
8-Pin PDIP and SOIC
Top View
Offset Trim
–In
+In
V–
1
2
3
4
8
7
6
5
Offset Trim
V+
Output
NC
(1)
−In
2
HG277 DRM Package
8-Pin VSON
Top View
Offset Trim
1
Pin 1
Indicator
8
Offset Trim
7
V+
+In
3
6
Output
V−
4
5
NC
Thermal Pad
on Bottom
(Connect to V−)
Pin Functions: HG277
PIN
NO.
1
2
3
4
5
6
7
8
NAME
Offset Trim
–In
+In
V–
NC
Output
V+
Offset Trim
I/O
I
I
I
—
—
O
—
—
DESCRIPTION
Input offset voltage trim (leave floating if not used)
Inverting input
Noninverting input
Negative (lowest) power supply
No internal connection (can be left floating)
Output
Positive (highest) power supply
Input offset voltage trim (leave floating if not used)
HG2277 DRM Package
8-Pin VSON
Top View
HG2277 P and D Packages
8-Pin PDIP and SOIC
Top View
Out A
–In A
+In A
V–
1
2
3
4
A
B
8
7
6
5
V+
Out B
–In B
+In A
3
Out A
1
8
Pin 1
Indicator
Out B
−In A
2
7
V+
6
−In B
+In B
V−
4
5
+In B
Pin Functions: HG2277
PIN
NAME
Out A
–In A
+In A
V–
+In B
–In B
Out B
V+
PDIP,
SOIC NO.
1
2
3
4
5
6
7
8
DFN NO.
1
2
3
4
5
6
8
7
I/O
O
I
I
—
I
I
O
—
Output channel A
Inverting input channel A
Noninverting input channel A
Negative (lowest) power supply
Noninverting input channel B
Inverting input channel B
Output channel B
Positive (highest) power supply
DESCRIPTION
Thermal Pad
on Bottom
(Connect to V−)
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2018 AUG
HG277/HG2277/HG4277
HG4277 P and D Packages
14 Pins PDIP and SOIC
Top View
Out A
–In A
+In A
V+
+In B
–In B
Out B
1
2
A
3
4
5
B
6
7
C
9
8
–In C
Out C
D
12
11
10
+In D
V–
+In C
14
13
Out D
–In D
Pin Functions: HG4277
PIN
NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NAME
Out A
–In A
+In A
V+
+In B
–In B
Out B
Out C
–In C
+In C
V–
+In D
–In D
Out D
I/O
O
I
I
—
I
I
O
O
I
I
—
I
I
O
Output channel A
Inverting input channel A
Noninverting input channel A
Positive (highest) power supply
Noninverting input channel B
Inverting input channel B
Output channel B
Output channel C
Inverting input channel C
Noninverting input channel C
Negative (lowest) power supply
Noninverting input channel D
Inverting input channel D
Output channel D
DESCRIPTION
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2018 AUG
HG277/HG2277/HG4277
5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
Supply voltage, Vs = (V+) – (V–)
Input voltage
Output short-circuit
(2)
(1)
MIN
(V–) –0.7
–55
MAX
36
(V+) +0.7
125
150
300
UNIT
V
V
°C
°C
°C
°C
Continuous
Operating temperature
Junction temperature
Lead temperature
Storage temperature, T
stg
(1)
(2)
–55
125
Stresses beyond those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended
Operating Conditions.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Short-circuit to ground, one amplifier per package.
5.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
V
±2000
±500
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage, Vs = (V+) – (V–)
Specified temperature
4 (±2)
–40
NOM
30 (±15)
MAX
36 (±18)
+85
UNIT
V
°C
5.4 Thermal Information for HG277
HG277
THERMAL METRIC
(1)
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
(1)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
P (PDIP)
49.2
39.4
26.4
15.4
26.3
—
D (SOIC)
8 PINS
110.1
52.2
52.3
10.4
51.5
—
40.7
41.3
16.7
0.6
16.9
3.3
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
DRM (VSON)
UNIT
For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics
application
report,
SPRA953.
5.5 Thermal Information for HG2277
HG2277
THERMAL METRIC
R
θJA
R
θJC(top)
(1)
(1)
P (PDIP)
47.2
36.0
D (SOIC)
8 PINS
107.4
45.8
DRM (VSON)
39.3
36.9
UNIT
°C/W
°C/W
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics
application
report,
SPRA953.
4
http://www.hgsemi.com.cn
2018 AUG
HG277/HG2277/HG4277
Thermal Information for HG2277 (continued)
HG2277
THERMAL METRIC
(1)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
P (PDIP)
24.4
13.4
24.3
—
D (SOIC)
8 PINS
47.9
5.7
47.3
—
15.4
0.4
15.6
2.2
°C/W
°C/W
°C/W
°C/W
DRM (VSON)
UNIT
5.6 Thermal Information for HG4277
HG4277
THERMAL METRIC
(1)
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
(1)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
D (SOIC)
14 PINS
67.0
24.1
22.5
2.2
22.1
—
66.3
20.5
26.8
2.1
26.2
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
P (PDIP)
UNIT
For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics
application
report,
SPRA953.
5.7 Electrical Characteristics for HGx277P, HGx277U, and HGx277xA
At T
A
= 25°C, and R
L
= 2 kΩ, unless otherwise noted
PARAMETER
TEST
CONDITIONS
HG277P, U
HG2277P, U
MIN
OFFSET VOLTAGE
V
0S
Input Offset Voltage
HG277P, U
(high-grade,
single)
Input Offset
Voltage Over
Temperature
HG2277P, U
(high-grade, dual)
All PA, UA,
Versions
AIDRM Versions
HG277P, U
(high-grade,
single)
dV
0S
/dT
Input Offset
Voltage Drift
HG2277P, U
(high-grade, dual)
All PA, UA,
AIDRM Versions
vs Time
Input Offset
Voltage: (all
models)
vs Power Supply
(PSRR)
V
S
= ±2 V to ±18
V
T
A
= –40°C to
85°C
DC
0.1
0.2
±0.3
±0.5
±0.5
See
(2)
HG277xA
HG2277xA
HG4277xA
MAX
MIN
TYP
(1)
UNIT
MAX
TYP
(1)
±10
±20
±30
±20
±50
µV
T
A
= –40°C to
85°C
±50
±100
µV
±0.1
T
A
= –40°C to
85°C
±0.15
µV/°C
±0.1
±0.25
±0.15
See
See
(2)
(2)
±1
µV/mo
±1
µV/V
±1
µV/V
Channel Separation (dual, quad)
(1)
(2)
V
S
= ±15 V
Specifications are the same as HG277P, U.
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5
2018 AUG
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