74HC07
74HC07
HEX BUFFER (OPEN DRAIN)
s
s
s
s
s
HIGH SPEED:
t
PD
= 6ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 07
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
74HC07B
74HC07M
T&R
74HC07RM13TR
DESCRIPTION
The 74HC07 is an high speed CMOS HEX
OPEN DRAIN BUFFER fabricated with silicon
gate C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which enables high noise
immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
http://www.hgsemi.net
1
2015 JAN
74HC07
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 3, 5, 9, 11,
13
2, 4, 6, 8, 10,
12
7
14
SYMBOL
1A to 6A
1Y to 6Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Z : High Impedance
Y
L
Z
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
http://www.hgsemi.net
2
2015 JAN
74HC07
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
I
I
I
OZ
I
CC
Input Leakage
Current
Output Leakage
Current
Quiescent Supply
Current
6.0
6.0
6.0
I
O
=20
µA
I
O
=20
µA
I
O
=20
µA
I
O
=4.0 mA
I
O
=5.2 mA
V
I
= V
CC
or GND
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.26
0.26
±
0.1
±0.5
1
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
0.1
0.1
0.1
0.33
0.33
±
1
±
5
10
Max.
-55 to 125°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
0.1
0.1
0.1
0.40
0.40
±
1
±
10
20
µA
µA
µA
V
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
Low Level Output
Voltage
V
IL
V
V
OL
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
T
A
= 25°C
Min.
Typ.
30
8
7
10
7
6
17
7
5
Max.
75
15
13
90
18
15
90
18
15
Value
-40 to 85°C
Min.
Max.
95
19
16
115
23
20
115
23
20
-55 to 125°C
Min.
Max.
110
22
19
135
27
23
135
27
23
ns
Unit
t
THL
Output Transition
Time
Propagation Delay
Time
Propagation Delay
Time
t
PLZ
R
L
= 1 K
Ω
ns
t
PZL
R
L
= 1 K
Ω
ns
http://www.hgsemi.net
3
2015 JAN
74HC07
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
5.0
T
A
= 25°C
Min.
Typ.
5
3
4
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
Unit
C
IN
C
OUT
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIME
(f=1MHz; 50% duty cycle)
http://www.hgsemi.net
4
2015 JAN
stm32/stm8
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