65HVD3082E/75HVD3082E
65HVD3085E/65HVD3088E
65HVD308xE Low-Power RS-485 Transceivers, Available in a Small MSOP-8 Package
Features
•
•
1
Description
The 65/75HVD308xE devices are half-duplex
transceivers designed for RS-485 data bus networks.
Powered by a 5-V supply, they are fully compliant
with TIA/EIA-485A standard. With controlled transition
times, these devices are suitable for transmitting data
over long twisted-pair cables. 65HVD3082E and
75HVD3082E devices are optimized for signaling
rates up to 200 kbps. The 65HVD3085E device is
suitable for data transmission up to 1 Mbps, whereas
the
65HVD3088E
device
is
suitable
for
applications that require signaling rates up to
20 Mbps.
These devices are designed to operate with very low
supply current, typically 0.3 mA, exclusive of the load.
When in the inactive-shutdown mode, the supply
current drops to a few nanoamps, which makes these
devices ideal for power-sensitive applications.
The wide common-mode range and high ESD-
protection levels of these devices makes them
suitable for demanding applications such as energy
meter networks, electrical inverters, status and
command signals across telecom racks, cabled
chassis interconnects, and industrial automation
networks where noise tolerance is essential. These
devices match the industry-standard footprint of the
HG75176 device. Power-on-reset circuits keep the
outputs in a high-impedance state until the supply
voltage has stabilized. A thermal-shutdown function
protects the device from damage due to system fault
conditions. The 75HVD3082E is characterized for
operation from 0°C to 70°C and 65HVD308xE are
characterized for operation from –40°C to 85°C air
temperature. The D package version of the
65HVD3082E
has been
characterized
for
operation from –40°C to 105°C.
•
•
•
•
•
•
Available in a Small MSOP-8 Package
Meets or Exceeds the Requirements of the
TIA/EIA-485A Standard
Low Quiescent Power
– 0.3-mA Active Mode
– 1-nA Shutdown Mode
1/8 Unit Load up to 256 Nodes on a Bus
Bus-Pin ESD Protection up to 15 kV
Industry-Standard HG75176 Footprint
Failsafe Receiver (Bus Open, Bus Shorted,
Bus Idle)
Glitch-Free Power-Up and Power-Down Bus
Inputs and Outputs
Applications
•
•
•
•
•
•
•
Energy Meter Networks
Motor Control
Power Inverters
Industrial Automation
Building Automation Networks
Battery-Powered Applications
Telecommunications Equipment
Simplified Schematic
R
RE
DE
D
D
R
A
B
R
T
R
T
A
B
D
R
R
RE
DE
D
A
B
A
B
R
D
R
D
R RE DE D
R RE DE D
http://www.hgsemi.com.cn
1
2019 NOV
65HVD3082E/75HVD3082E
65HVD3085E/65HVD3088E
Pin Configuration and Functions
D, P, and DGK Packages
8-Pin SOIC, VSSOP, and PDIP
Top View
R
RE
DE
D
1
2
3
4
8
7
6
5
V
CC
B
A
GND
Pin Functions
PIN
NAME
A
B
D
DE
GND
R
RE
V
CC
NO.
6
7
4
3
5
1
2
8
TYPE
Bus input/output
Bus input/output
Digital input
Digital input
Reference potential
Digital output
Digital input
Supply
DESCRIPTION
Driver output or receiver input (complementary to B)
Driver output or receiver input (complementary to A)
Driver data input
Driver enable, active high
Local device ground
Receive data output
Receiver enable, active low
4.5-V to 5.5-V supply
Absolute Maximum Ratings
over operating free-air temperature range unless otherwise noted
(1)
Supply voltage, V
CC
Voltage at A or B
Voltage at any logic pin
Receiver output current
Voltage input, transient pulse, A and B, through 100
Ω
(see
Figure 20)
Junction Temperature, T
J
Storage temperature, T
stg
(1)
(2)
(2)
MIN
–0.5
–9
–0.3
–24
–50
MAX
7
14
V
CC
+ 0.3
24
50
170
150
UNIT
V
V
V
mA
V
°C
°C
Stresses beyond those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating
Conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-
001
(1)
Electrical Fast Transient/Burst, A, B, and GND
(3)
(1)
(2)
(3)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Tested in accordance with IEC 61000-4-4.
Bus pins and GND
All pins
±15000
±4000
±1000
±4000
V
UNIT
V
(ESD)
Electrostatic
discharge
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
http://www.hgsemi.com.cn
2
2019 NOV
65HVD3082E/75HVD3082E
65HVD3085E/65HVD3088E
Recommended Operating Conditions
over operating free-air temperature range unless otherwise noted
(1)
MIN
Supply voltage, V
CC
Voltage at any bus terminal (separately or common mode) , V
I
High-level input voltage (D, DE, or RE inputs), V
IH
Low-level input voltage (D, DE, or RE inputs), V
IL
Differential input voltage, V
ID
Output current, I
O
Differential load resistance, R
L
65HVD3082E, 75HVD3082E
Signaling rate, 1/t
UI
65HVD3085E
65HVD3088E
65HVD3082E (D package)
Operating free-air temperature, T
A
65HVD3082E (DGK and P packages),
65HVD3085E, 65HVD3088E
75HVD3082E
Junction temperature, T
J
(1)
–40
–40
0
–40
Driver
Receiver
4.5
–7
2
0
–12
–60
–8
54
60
0.2
1
20
105
85
70
130
°C
°C
Mbps
NOM
MAX
5.5
12
V
CC
0.8
12
60
8
UNIT
V
V
V
V
mA
Ω
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
Thermal Information
THERMAL METRIC
(1)
65HVD3082E, 75HVD3082E,
65HVD3085E, 65HVD3088E
D (SOIC)
8 PINS
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
(1)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
130
80
55
7.9
47
DGK (VSSOP)
8 PINS
180
66
110
4.6
73.1
65HVD3082E,
65HVD3088E
P (PDIP)
8 PINS
70
80
40
17.6
28.3
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
For more information about traditional and new thermal metrics, see the
Semiconductor and IC Package Thermal Metrics
application
report,
SPRA953.
http://www.hgsemi.com.cn
3
2019 NOV
65HVD3082E/75HVD3082E
65HVD3085E/65HVD3088E
Electrical Characteristics: Driver
over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
I
O
= 0, No Load
|V
OD
|
Differential output voltage
R
L
= 54
Ω
(see
Figure 8)
R
L
= 100
Ω
V
TEST
= –7 V to 12 V (see
Figure 9)
Δ|V
OD
|
V
OC(SS)
ΔV
OC(SS)
V
OC(PP)
I
OZ
I
I
I
OS
(1)
Change in magnitude of differential
output voltage
Steady-state common-mode output
voltage
Change in steady-state common-mode
output voltage
Peak-to-peak common-mode output
voltage
High-impedance output current
Input current
Short-circuit output current
See
Figure 8
and
Figure 9
MIN
3
1.5
2
1.5
–0.2
1
See
Figure 10
–0.1
See
Figure 10
See receiver input currents in
Electrical
Characteristics: Receiver
D, DE
−7
V
≤
V
O
≤
12 V (see
Figure 14)
–100
–250
100
250
µA
mA
0
500
0.1
mV
0
2.6
0.2
3
V
V
TYP
(1)
4.3
2.3
V
MAX
UNIT
All typical values are at 25°C and with a 5-V supply.
Electrical Characteristics: Receiver
over recommended operating conditions unless otherwise noted
PARAMETER
V
IT+
V
IT–
V
hys
V
OH
V
OL
I
OZ
Positive-going differential input threshold
voltage
Negative-going differential input threshold
voltage
Hysteresis voltage (V
IT+
– V
IT–
)
High-level output voltage
Low-level output voltage
High-impedance-state output current
V
ID
= 200 mV, I
OH
= –8 mA (see
Figure 15)
V
ID
= –200 mV, I
O
= 8 mA (see
Figure 15)
V
O
= 0 or V
CC
, RE = V
CC
V
IH
= 12 V, V
CC
= 5 V
I
I
Bus input current
V
IH
= 12 V, V
CC
= 0 V
V
IH
= –7 V, V
CC
= 5 V
V
IH
= –7 V, V
CC
= 0 V
I
IH
I
IL
C
diff
(1)
High-level input current, (RE)
Low-level input current, (RE)
Differential input capacitance
All typical values are at 25°C and with a 5-V supply.
V
IH
= 2 V
V
IL
= 0.8 V
V
I
= 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
–0.1
–0.05
–60
–60
–1
0.04
0.06
–0.04
–0.03
–30
–30
7
μA
μA
pF
4
I
O
= –8 mA
I
O
= 8 mA
–200
TEST CONDITIONS
MIN
TYP
(1)
–85
–115
30
4.6
0.15
0.4
1
0.1
0.125
mA
MAX
–10
UNIT
mV
mV
mV
V
V
μA
http://www.hgsemi.com.cn
4
2019 NOV
65HVD3082E/75HVD3082E
65HVD3085E/65HVD3088E
Power Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
Driver and receiver enabled
Driver enabled, receiver
disabled
Receiver enabled, driver
disabled
Driver and receiver disabled
TEST CONDITIONS
D at V
CC
or open, DE at V
CC
,
RE at 0 V, No load
D at V
CC
or open, DE at V
CC
,
RE at V
CC
, No load
D at V
CC
or open, DE at 0 V,
RE at 0 V, No load
D at V
CC
or open, DE at 0 V,
RE at V
CC
Input to D is a 50% duty
cycle square wave at max
specified signal rate
R
L
= 54
Ω
V
CC
= 5.5 V, T
J
=
130°C
ALL HVD3082E
ALL HVD3085E
ALL HVD3088E
MIN
TYP
(1)
425
330
300
0.001
MAX
900
600
600
2
203
205
276
mW
UNIT
µA
µA
µA
µA
I
CC
P
(AVG)
Average power dissipation
(1)
All typical values are at 25°C and with a 5-V supply.
Switching Characteristics: Driver
over recommended operating conditions unless otherwise noted
PARAMETER
t
PLH
t
PHL
TEST CONDITIONS
HVD3082E
Propagation delay time, low-to-high-level output R
L
= 54
Ω,
C
L
= 50 pF
Propagation delay time, high-to-low-level output (see
Figure 11)
HVD3085E
HVD3088E
HVD3082E
t
r
t
f
Differential output signal rise time
Differential output signal fall time
R
L
= 54
Ω,
C
L
= 50 pF
(see
Figure 11)
HVD3085E
HVD3088E
HVD3082E
t
sk(p)
Pulse skew (|t
PHL
– t
PLH
|)
R
L
= 54
Ω,
C
L
= 50 pF
(see
Figure 11)
HVD3085E
HVD3088E
t
PZH
t
PZL
Propagation delay time, high-impedance-to-
R
L
= 110
Ω,
RE at 0 V
high-level output
(see
Figure 12
and
Propagation delay time, high-impedance-to-low-
Figure 13)
level output
Propagation delay time, high-level-to-high-
impedance output
Propagation delay time, low-level-to-high-
impedance output
Propagation delay time, shutdown-to-high-level
output
Propagation delay time, shutdown-to-low-level
output
R
L
= 110
Ω,
RE at 0 V
(see
Figure 12
and
Figure 13)
R
L
= 110
Ω,
RE at V
CC
(see
Figure 12)
HVD3082E
HVD3085E
HVD3088E
HVD3082E
HVD3085E
HVD3088E
HVD3082E
HVD3085E
HVD3088E
500
MIN
TYP
700
150
12
900
200
7
20
5
1.4
2500
1000
13
80
60
12
3500
2500
1600
MAX
1300
500
20
1500
300
15
200
50
2
7000
2500
30
200
100
30
7000
4500
2600
ns
ns
ns
ns
ns
ns
UNIT
t
PHZ
t
PLZ
t
PZH(SHDN)
t
PZL(SHDN)
http://www.hgsemi.com.cn
5
2019 NOV