ULN2003/ULN2004
ULN2003/ULN2004
Seven Darlington array
Features
■
■
■
■
■
■
■
Seven Darlingtons per package
Output current 500 mA per driver (600 mA
peak)
Output voltage 50 V
Integrated suppression diodes for inductive
loads
Outputs can be paralleled for higher current
TTL/CMOS/PMOS/DTL compatible inputs
Inputs pinned opposite outputs to simplify
layout
These versatile devices are useful for driving a
wide range of loads including solenoids, relays
DC motors, LED displays filament lamps, thermal
printheads and high power buffers.
The ULN2003A/2004A are
supplied in 16 pin plastic DIP packages with a
copper leadframe to reduce thermal resistance.
They are available also in small outline package
(SOP-16) as ULN2003D/2004D
DIP-16
SOP-16
(Narrow)
Description
The ULN2003, ULN2004,
are high voltage, high current Darlington
arrays each containing seven open collector
Darlington pairs with common emitters. Each
channel rated at 500 mA and can withstand peak
currents of 600 mA. Suppression diodes are
included for inductive load driving and the inputs
are pinned opposite the outputs to simplify board
layout.
The versions interface to all common logic
families:
– ULN2003 (5 V TTL, CMOS)
– ULN2004 (6 - 15 V CMOS, PMOS)
Pin configuration
(top view)
http://www.hgsemi.com.cn
1
2018 AUG
ULN2003/ULN2004
Maximum ratings
Absolute maximum ratings
Symbol
V
O
V
I
I
C
I
B
T
A
T
STG
T
J
Output voltage
Input voltage (for ULN2003A/D - 2004A/D )
Continuous collector current
Continuous base current
Operating ambient temperature range
Storage temperature range
Junction temperature
Parameter
Value
50
30
500
25
- 40 to 85
- 55 to 150
150
Unit
V
V
mA
mA
°C
°C
°C
Thermal data
Symbol
R
thJA
Parameter
Thermal resistance junction-ambient, Max.
DIP-16
70
SO-16
120
Unit
°C/W
http://www.hgsemi.com.cn
3
2018 AUG
ULN2003/ULN2004
Electrical characteristics
T
A
= 25 °C unless otherwise specified.
Electrical characteristics
Symbol
Parameter
Test condition
V
CE
= 50 V, (Figure
1.
)
T
A
= 85°C, V
CE
= 50 V (Figure
1.
)
I
CEX
Output leakage current
T
A
= 85°C for ULN2002, V
CE
= 50 V,
V
I
= 6 V (Figure
2.)
T
A
= 85°C for ULN2002, V
CE
= 50 V,
V
I
= 1V (Figure
2.)
I
C
= 100 mA, I
B
= 250 µA
V
CE(SAT)
Collector-emitter saturation
voltage (Figure
3.
)
I
C
= 200 mA, I
B
= 350 µA
I
C
= 350 mA, I
B
= 500 µA
for ULN2002, V
I
= 17 V
I
I(ON)
Input current (Figure
4.
)
for ULN2003, V
I
= 3.85 V
for ULN2004, V
I
= 5 V
V
I
= 12 V
I
I(OFF)
Input current (Figure
5.
)
T
A
= 85°C, I
C
= 500 µA
V
CE
= 2 V, for ULN2002
I
C
= 300 mA
for ULN2003
I
C
= 200 mA
I
C
= 250 mA
I
C
= 300 mA
for ULN2004
I
C
= 125 mA
I
C
= 200 mA
I
C
= 275 mA
I
C
= 350 mA
for ULN2001, V
CE
= 2 V,
I
C
= 350 mA
1000
15
0.5 V
I
to 0.5 V
O
0.5 V
I
to 0.5 V
O
V
R
= 50 V
T
A
= 85°C
,
V
R
= 50 V
I
F
= 350 mA
1.7
0.25
0.25
25
1
1
50
µA
100
2
V
pF
µs
µs
50
0.9
1.1
1.3
0.82
0.93
0.35
1
65
13
2.4
2.7
3
5
6
7
8
Min.
Typ.
Max.
50
100
500
500
1.1
1.3
1.6
1.25
1.35
mA
0.5
1.45
µA
V
µA
Unit
V
I(ON)
Input voltage (Figure
6.)
V
h
FE
C
I
t
PLH
t
PHL
I
R
V
F
DC Forward current gain
(Figure
3.)
Input capacitance
Turn-on delay time
Turn-off delay time
Clamp diode leakage current
(Figure
7.)
Clamp diode forward voltage
(Figure
8.
)
http://www.hgsemi.com.cn
4
2018 AUG
ULN2003/ULN2004
Test circuits
Figure 1. Output leakage currentFigure
Figure 2. Output leakage current
Figure 3.Collector-emitter saturation voltage
Figure 4.Input current (ON)
Figure 5.Input current (OFF)
Figure 6.Input voltage
http://www.hgsemi.com.cn
5
2018 AUG