GOFORD
Description
The GC11N 65 uses advanced super junction technology and
design to provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for
industry’s AC-DC SMPS requirement for PFC, AC/DC power
conversion, and industrial power application.
650V
GC11N65
V
DS
R
DS (ON )
@ 10V (Max)
I
D
11
A
360
mΩ
General Features
●
New technology for high voltage device
●
Low on-resistance and low conduction losses
●
Small Package
●
Ultra Low Gate Charge cause lower driving requirement
●
100% Avalanche Tested
●
RoHS Compliant
Schematic Diagram
Application
●
Power Factor Correction (PFC)
●
Switched Mode Power Supply (SMPS)
●
Uninterruptible Power Supply (UPS)
TO-252
Marking and Pin Assignment
Ordering Information
Part Number
Marking
Case
TO-220
TO-220F
TO-252
Packaging
50pcs/Tube
50pcs/Tube
2500pcs/Reel
GC11N65T
GC11N65F
GC11N65K
GC11N65
GC11N65
GC11N65
Absolute Maximum Ratings (T
C
=25℃ unless otherwise noted)
Value
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Unit
TO-220F
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
T
J
,T
STG
TO-252
TO-220
650
±30
11
33
211
1.6
0.32
78
V
V
A
A
mJ
A
mJ
31.3
W
℃
-55 To 150
Thermal Characteristic
Value
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient (Note 2)
Symbol
R
thJC
R
thJA
TO-252
TO-220
1.6
62
TO-220F
4
80
Unit
℃/W
℃/W
HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466
Page 1
（Preliminary
version）
GOFORD
Electrical Characteristics (T
J
=25℃ unless otherwise noted)
Parameter
On/ Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current ( T
J
=25℃ )
Zero Gate Voltage Drain Current ( T
J
=150℃ )
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Continuous Body Diode Current (Note 2)
Pulsed Diode Forward Current
Diode Forward Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
V
R
=520V, I
F
=I
S
,
di
F
/dt = 100A/μs
T
C
=25℃
T
C
=25℃
T
J
=25℃,
I
SD
=11A,V
GS
=0V
-
-
-
-
-
-
-
-
-
280
2.8
17
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=520V, I
D
=11A, V
GS
=10V
V
DD
=400V,I
D
=11A
V
GS
=10V,R
GEN
=25Ω
-
-
-
-
-
-
-
42
20
123
6.4
21
4.5
7
C
lss
C
oss
C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
-
-
-
901
50
5.5
V
GS(th)
R
DS(ON)
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=5.5A
V
DS
=10V,I
D
=5.5A
2.5
-
-
-
-
-
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=650V,V
GS
=0V
V
DS
=650V,V
GS
=0V
V
GS
=±30V,V
DS
=0V
650
-
-
-
-
-
-
-
GC11N65
Symbol
Condition
Min
Typ
Max
-
1
100
±100
Unit
V
μA
μA
nA
4
360
-
V
mΩ
S
g
FS
-
-
-
PF
PF
PF
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
11
33
1.4
-
-
-
A
A
V
nS
μC
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
I
AS
= 1.6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤
1%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466
Page 2
（Preliminary
version）
GOFORD
Typical Electrical And Thermal Characteristics
Vdd
Rl
D
Vout
G
S
90%
GC11N65
t
on
t
d(on)
t
r
t
d(off)
t
off
t
f
Vin
Vgs
Rgen
90%
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
I
D
-Drain Current (A)
V
DS
-Drain to Source Voltage (V)
I
D
- Drain Current (A）
V
GS
-Gate to Source Voltage (V)
Figure 3. Output Characteristics
Rdson-
On Resistance (Ω)
Figure 4. Transfer Charateristics
I
D
- Drain Current (A)
Capacitance
（PF）
V
DS
-Drain to Source Voltage (V)
Figure 5. On Resistance vs. Drain Current
Figure 6. Capacitance
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Page 3
（Preliminary
version）
GOFORD
V
GS
-Gate to Source Voltage (V)
GC11N65
I
S
- Source current (A)
Qg- Total Gate Charge (nC)
V
SD
- Source to Drain Voltage (V)
Figure 7. Gate Charge
Figure 8. Body Diode Forward Voltage
Rdson- (Normalized)
V
GS(th)
(Variance)
T
J
- Junction Temperature (℃)
T
J
- Junction Temperature (℃)
Figure 9. Rdson vs T
J
Zt
hJC -
Thermal Impedance (K/W)
Zt
hJC -
Thermal Impedance (K/W)
Figure 10. Vth vs T
J
T
p -
Pulse Width (s)
T
p -
Pulse Width (s)
Figure 11. Transient Thermal
Impedance (TO-252, TO-220)
Figure 12. Transient Thermal Impedance
(TO-220F)
HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466
Page 4
（Preliminary
version）
GOFORD
TO-252 Package Information
E
b3
GC11N65
c
L5
L3
D
H
A2
E1
L4
e
b
A
L2
θ
(L1)
SYMBOL
A
A1
A2
b
b3
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
L5
θ
COMMON DIMENSIONS
mm
MIN
NOM
2.20
0.00
0.97
0.68
5.20
0.43
5.98
6.40
4.63
9.40
1.38
0.88
0.50
1.65
0°
2.30
-
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
-
1.80
-
A1
L
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
6.80
-
10.50
1.75
1.28
1.00
1.95
8°
Page 5
（Preliminary
version）
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D1
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