GOFORD
Description
Features
V
DSS
200V
630A
@ 10V (typ)
R
DS(ON)
0.21
Ω
I
D
9A
•
Fast switching
•
100% avalanche tested
•
Improved dv/dt capability
TO-252
TO-251
Application
•
DC Motor Control and Class D Amplifier
•
Uninterruptible Power Supply (UPS)
•
Automotive
Absolute Maximum Ratings
T
C
=25℃
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
R
θJC
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Peak Diode Recovery Energy
note3
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Case
unless otherwise specified
Max.
TO-251/TO-252
200
± 30
T
C
= 25℃
T
C
= 100℃
9
5.83
36
320
5
T
C
= 25℃
T
C
> 25℃
83
0.67
1.5
-55 to +150
Parameter
Units
V
V
A
A
A
mJ
V/ns
W
W/℃
℃/W
℃
Operating and Storage Temperature Range
*Drain current limited by maximum junction temperature
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Page 1
GOFORD
Electrical Characteristics
T
C
=25℃
Symbol
Off Characteristic
V
(BR)DSS
△V
(BR)DSS
/△T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
note4
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
= 0V,I
D
= 250µA
Reference to 25℃,
I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125℃
V
DS
= 0V, V
GS
= ±30V
200
-
-
-
-
-
0.25
-
-
-
-
-
1
10
±100
Parameter
630A
unless otherwise specified
Test Condition
Min.
Typ.
Max.
Units
V
V/℃
µA
µA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250µA
V
GS
=10V, I
D
= 4.5A
V
DS
=30V, I
D
= 4.5A
2
-
-
-
0.21
9.2
4
0.25
-
S
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
VDD = 160V, ID = 9A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
-
-
-
-
-
-
509
51.5
3.2
11.8
2.36
3.98
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 100V, I
D
= 9A,
RG = 10 , VGS = 10V
-
-
-
-
10.33
10.7
29.1
11.1
-
-
-
-
ns
ns
ns
ns
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
3. I
SD
≤
9A, di/dt
≤
200A/µs, V
DD
≤
B
VDSS
, Starting T
J
= 25°C
4. Pulse width
≤
300µs; duty cycle
≤
2%.
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 9A
V
GS
= 0V, I
F
= 9A,
di/dt =100A/µs
-
-
-
-
-
-
-
-
201
663
9
36
1.4
-
-
A
A
V
ns
nC
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TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Typical Performance Characteristics
25
V
GS
= 10.0V
7.5V
5.0V
4.5V
4.0V
3.5V
25
PULSED TEST
V
DS
= 30V
20
I
D
,Drain Current,A
630A
25℃
20
ID,Drain Current,A
15
15
150℃
10
10
5
5
0
0
10
20
30
VDS,Drain-to-Source Voltage,V
0
0
2
4
6
8
10
VGS,Gate-to-Source Voltage,V
Figure 1. Output Characteristics
1.2
PULSED TEST
Figure 2. Transfer Characteristics
R
DS(on)
,Drain-to-Source On Resistance,
PULSED TEST
V
GS
= 0V
10
I
SD
,Reverse Drain Current,A
V
GS
= 10V
1.0
150℃
0.8
25℃
1
0.6
0.4
V
GS
= 20V
0.2
0
10
20
30
40
50
I
D
,Drain Current,A
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
VSD,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs.
Drain Current and Gate Voltage
10000
Figure 4. Body Diode Forward Voltage vs.
Source Current and Temperature
10
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
1000
Capacitance,pF
C
iss
VGS,Gate-to-Source Voltage,V
8
6
100
C
oss
4
10
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
= C
gd
0.1
1
10
C
rss
2
I
D
= 9A
0
1
100
VDS,Drain-to-Source Voltage,V
0
2
4
6
8
10
12
Q
G
,Total Gate Charge,nC
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
1.2
3
PULSED TEST
V
GS
= 10V
I
D
= 4.5A
630A
BVDSS,(Normalized)
Drain-to-Source Breakdown Voltage
2.5
1.1
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
2
1
1.5
1
0.9
0.5
0.8
-100
-50
0
50
100
150
200
0
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(℃)
T
J
,Junction Temperature(℃)
Figure 7. Normalized Breakdown Voltage vs.
Junction Temperature
100
10µs
Figure 8. Normalized On Resistance vs.
Junction Temperature
10
9
8
10
100µs
7
1ms
ID,Drain Current,A
I
D
,Drain Current,A
6
5
4
3
2
1
Operation in This Area
is Limited by R
DS(on)
0.1
10ms
DC
SINGLE PULSE
T
C
=25℃
0.01
1
10
100
1000
1
0
0
25
50
75
100
125
150
VDS,Drain-to-Source Voltage,V
T
C
,Case Temperature,℃
Figure 9. Maximum Safe Operating Area for RU9N20A
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
ZθJC,Transient Thermal Impedance,℃/W
1
D=0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t,Pulse Duration,s
1.0E-01
Notes:
1.Duty Factor D = t1/t2
2.Peak Tj = Pdm x Zthjc + Tc
1.0E+00
1.0E+01
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case for RU9N20A
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
630A
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
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