GOFORD
Description
Features
•
18N20
V
DSS
200V
@ 10V (typ)
R
DS(ON)
0.136
Ω
I
D
18A
•
Fast switching
•
100% avalanche tested
•
Improved dv/dt capability
TO-251
TO-252
Application
•
DC-DC & DC-AC Converters for telecom,
industrial and consumer environment
•
Uninterruptible Power Supply (UPS)
•
Switch Mode Low Power Supplies
•
Industrial Actuators
Absolute Maximum Ratings
T
C
=25℃
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
R
θJC
T
J
, T
STG
unless otherwise specified
Max.
TO-220
TO-251
200
± 30
T
C
= 25℃
T
C
= 100℃
18
11.45
72
18*
11.45*
72*
320
8
T
C
= 25℃
T
C
> 25℃
110
0.89
1.12
65.8
0.53
1.9
-55 to +150
65.8
0.53
1.9
18*
11.45*
72*
TO-252
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Peak Diode Recovery Energy
note3
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Units
V
V
A
A
A
mJ
V/ns
W
W/℃
℃/W
℃
*Drain current limited by maximum junction temperature
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FAX：0755-29961466
Page 1
GOFORD
Electrical Characteristics
T
C
=25℃
Symbol
Off Characteristic
V
(BR)DSS
△V
(BR)DSS
/△T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
note4
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
= 0V,I
D
= 250Μa
Reference to 25℃,
I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125℃
V
DS
= 0V, V
GS
= ±20V
200
-
-
-
-
-
0.3
-
-
-
-
-
1
10
Parameter
18N20
unless otherwise specified
Test Condition
Min.
Typ.
Max.
Units
V
V/℃
µA
µA
nA
±100
On Characteristics
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250µA
V
GS
=10V, I
D
= 9A
V
DS
=30V, I
D
= 9A
1
-
-
-
0.136
8
3
0.16
-
S
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
V
DD
= 160V, I
D
= 18A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
-
-
-
-
-
-
836
81.2
3.81
17.7
3.9
5.2
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 100V, I
D
= 18A,
R
G
= 5 , V
GS
= 10V
-
-
-
-
12.3
21.1
22.5
7.7
-
-
-
-
ns
ns
ns
ns
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
3. I
SD
≤
18A, di/dt
≤
200A/µs, V
DD
≤
B
VDSS
, Starting T
J
= 25°
C
4. Pulse width
≤
300µs; duty cycle
≤
2%.
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 9A
V
GS
= 0V, I
F
= 18A,
di/dt =100A/µs
-
-
-
-
-
-
-
-
235
1045
18
72
1.5
-
-
A
A
V
ns
nC
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TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Typical Performance Characteristics
60
50
40
30
20
10
5
40
18N20
ID,Drain Current,A
I
D
,Drain Current,A
V
GS
= 10.0V
7.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
35
30
25
PULSED TEST
V
DS
= 30V
25℃
150℃
20
15
10
0
0
10
20
30
VDS,Drain-to-Source Voltage,V
0
0
2
4
6
8
10
VGS,Gate-to-Source Voltage,V
Figure 1. Output Characteristics
0.20
PULSED TEST
Figure 2. Transfer Characteristics
R
DS(on)
,Drain-to-Source On Resistance,
PULSED TEST
V
GS
= 0V
I
SD
,Reverse Drain Current,A
10
0.18
V
GS
= 10V
150℃
25℃
0.16
0.14
1
0.12
V
GS
= 20V
0.10
0
5
10
15
20
25
30
35
40
I
D
,Drain Current,A
0.1
0.3
0.5
0.7
0.9
1.1
VSD,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage vs.
Source Current and Temperature
10
1000
VGS,Gate-to-Source Voltage,V
C
iss
Capacitance,pF
8
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
100
6
C
oss
10
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
= C
gd
0.1
1
10
4
2
I
D
= 18A
0
C
rss
100
0
2
4
6
8
10
12
14
1
VDS,Drain-to-Source Voltage,V
16
18
20
Q
G
,Total Gate Charge,nC
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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Page 3
GOFORD
1.2
e
g
a
t
l
o
) V
1.1
d n
e w
z
i o
l d
a k
ma
r e
o r
1
NB
(
, e
S c
S r
Du
V o
S
B -
0.9
o
t
-
n
i
a
r
D
0.8
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(℃)
℃
3
PULSED TEST
V
GS
= 10V
I
D
= 9A
18N20
2.5
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
2
1.5
1
0.5
0
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(℃)
Figure 7. Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8. Normalized On Resistance vs.
Junction Temperature
20
100
10µs
100µs
10
1ms
10ms
1
DC
Operation in This Area
is Limited by R
DS(on)
0.1
18
16
14
ID,Drain Current,A
I
D
,Drain Current,A
12
10
8
6
4
2
0
0
25
50
75
100
125
150
SINGLE PULSE
T
C
=25℃
T
J
=150℃
0.01
1
10
100
VDS,Drain-to-Source Voltage,V
T
C
,Case Temperature,℃
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
ZθJC,Transient Thermal Impedance,℃/W
1
D=0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t,Pulse Duration,s
1.0E-01
Notes:
1.Duty Factor D = t1/t2
2.Peak Tj = Pdm x Zthjc + Tc
1.0E+00
1.0E+01
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
18N20
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
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