GOFORD
N-Channel
Enhancement Mode Power MOSFET
Description
The G2003A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G2003A
General Features
●
V
DS
= 190V,I
D
=3A
R
DS(ON)
< 540mΩ @ V
GS
=10V (Typ:430mΩ)
R
DS(ON)
< 560mΩ @ V
GS
=10V (Typ:440mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic Diagram
Marking and Pin Assignment
Application
●
Power switching application
SOT-23-3L
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
190
±20
3
8
1.8
-55 To 150
Unit
V
V
A
A
W
℃
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
70
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=190V,V
GS
=0V
190
-
-
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX
：0755-29961466
Page 1
GOFORD
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note
2)
(Note 4)
G2003A
I
GSS
V
GS(th)
R
DS(ON)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
V
DS
=100V,I
D
=2A,
V
GS
=10V
V
DD
=100V, R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=2A
V
GS
=4.5V, I
D
=2A
V
DS
=15V,I
D
=2A
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
430
440
8
±100
3
540
560
-
-
-
-
-
-
-
-
-
-
1.2
3
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
V
DS
=25V,V
GS
=0V,
F=1.0MHz
580
90
3
10
12
15
15
12
2.5
3.8
-
-
V
GS
=0V,I
S
=3A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX
：0755-29961466
Page 2
GOFORD
Test Circuit
1）E
AS
test circuit
G2003A
2）Gate charge test circuit
3）Switch Time Test Circuit
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX
：0755-29961466
Page 3
GOFORD
Typical Electrical and Thermal Characteristics (Curves)
G2003A
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(m
Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX
：0755-29961466
Page 4
GOFORD
G2003A
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vth (V) Variance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX
：0755-29961466
Page 5
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