GOFORD
Description
The G16P03 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
G16P03
General Features
VDSS
-30V
RDS(ON)
@-10V (typ)
10
mΩ
ID
-16A
Schematic diagram
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Marking and pin assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOP-8 top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
-30
±20
-16
-48
3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
41.67
℃
/W
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=-2A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-10A,V
GS
=-10V
V
DD
=-15V, ID=-10A,
V
GS
=-10V,R
GEN
=1Ω
-
-
-
-
-
-
-
9
8
28
10
24
3.5
6
C
lss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
-
-
-
1750
215
180
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-7A
V
DS
=-10V,I
D
=-10A
-1
-
-
20
-1.5
10
14
-
G16P03
Symbol
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-30
-
-
Typ
-33
-
-
-
-1
±100
-3
15
25
-
-
-
-
-
-
-
-
-
-
-
-1.2
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Typical Electrical and Thermal Characteristics
t
d(on)
t
on
t
r
90%
G16P03
t
off
t
f
90%
t
d(off)
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Normalized On-Resistance
G16P03
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
G16P03
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
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