GOFORD
Description
The G1002L uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G1002L
General Features
●
V
DSS
100V
@ 10V (typ)
R
DS(ON)
180
m
Ω
I
D
2A
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
100
±20
2
5
1.1
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
120
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250µA
V
DS
=100V,V
GS
=0V
100
-
110
-
-
1
V
µA
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL 0755-29961262
FAX
0755-29961466
Page 1
GOFORD
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=1.3A
-
-
-
-
(Note 4)
G1002L
I
GSS
V
GS
=±20V,V
DS
=0V
-
-
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250µA
V
GS
=10V, I
D
=1A
V
DS
=5V,I
D
=1A
1.2
-
1
1.8
180
-
2.5
250
-
V
m
S
C
lss
C
oss
C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
-
-
-
190
22
13
-
-
-
PF
PF
PF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=50V,I
D
=1.3A,
V
GS
=10V
V
DD
=50V,I
D
=1.3A,R
L
=39
V
GS
=10V,R
G
=1
-
-
-
-
-
-
-
6
10
10
6
5.2
0.75
1.4
-
-
-
-
nS
nS
nS
nS
nC
-
-
nC
nC
1.2
2
V
A
Notes:
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
≤
10 sec.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL 0755-29961262
FAX
0755-29961466
Page 2
GOFORD
Test Circuit
1）E
AS
test circuit
）
G1002L
2）Gate charge test circuit
）
3）Switch Time Test Circuit
）
HTTP://www.gofordsemi.com
TEL 0755-29961262
FAX
0755-29961466
Page 3
GOFORD
Typical Electrical and Thermal Characteristics (Curves)
G1002L
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Normalized On-Resistance
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL 0755-29961262
FAX
0755-29961466
Page 4
GOFORD
G1002L
C Capacitance (nF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
Vds Drain-Source Voltage (V)
Power Dissipation (w)
I
D
- Drain Current (A)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL 0755-29961262
FAX
0755-29961466
Page 5
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