GOFORD
Description
The G13N04 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G13N04
General Features
V
DSS
40V
Schematic diagram
@ 4.5V(typ)
R
DS(ON)
13
m
Ω
@ 10V (typ)
R
DS(ON)
10
m
Ω
I
D
13A
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
D
D
Marking and pin Assignment
D
D
Application
●
Load switching
●
Hard switched and high frequency circuits
●
Quick charge application
S
Pin1
S
S
G
SOP-8 top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
40
±20
13
8.2
52
3
-55 To 150
Unit
V
V
A
A
A
W
℃
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
41.67
℃
/W
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
G13N04
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Condition
V
GS
=0V I
D
=250μA
V
DS
=40V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=6.5A
V
GS
=4.5V, I
D
=6.5A
V =5V,I
D
=6.5A
DS
Min
40
-
-
1.2
-
-
Typ
46
-
-
1.6
10
13
75
Max
-
1
±100
2.3
12
16
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
m
Ω
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
(Note 3)
(Note 2)
(Note4)
V
DS
=20V,V
GS
=0V,
F=1.0MHz
-
-
-
-
1780
209
160
6.4
17.2
29.6
16.8
30
4.2
9.5
V
DD
=20V, R
L
=2Ω
V
GS
=10V,R
G
=3Ω
-
-
-
-
-
-
-
-
V
DS
=20V,I
D
=6.5A,
V
GS
=10V
V
SD
I
S
t
rr
Qrr
V
GS
=0V,I
S
=13A
TJ = 25°C, IF = 6.5A
di/dt = 100A/μs
(Note3)
1.0
-
29
26
13
-
-
V
A
nS
nC
-
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Test circuit
1) E
AS
Test Circuit
G13N04
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Typical Electrical and Thermal Characteristics (Curves)
G13N04
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
G13N04
Power Dissipation (W)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature (℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
