GOFORD
Description
The 3415 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protected.
3415
General Features
●
V
DSS
-20V
@ -4.5V(Typ) @-2.5V(Typ)
R
DS(ON)
34
m
Ω
R
DS(ON)
44
m
Ω
I
D
-5.6
A
Schematic diagram
●
High Power and current handing capability
●
RoHS Compliant
●
Surface mount package
Marking and pin Assignment
Application
●
PWM application
●
Load switch
SOT-23
Ordering Information
Part Number
3415
Marking
3415
Case
SOT-23
Packaging
3000pcs/Reel
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
-20
±10
-5.6
-30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
89.3
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-20
Typ
-
Max
-
Unit
V
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-1A
-
-
-
-
-1.2
-2.2
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-4A,
V
GS
=-4.5V
V
DD
=-10V,R
L
=2. 5Ω
V
GS
=-4.5V,R
GEN
=3Ω
-
-
-
-
-
-
-
12
10
19
25
12
1.4
3.6
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
-
-
-
950
165
120
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
DS
=-5V,I
D
=-4A
-0.4
-
-
8
-0.65
34
44
-
-1.0
47
60
-
I
DSS
I
GSS
V
DS
=-20V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
-
-
-
-
1
±10
3415
μA
μA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
3415
t
off
t
f
90%
t
d(off)
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
Vds Drain-Source Voltage (V)
Figure 3 Power Dissipation
Figure 4
Safe Operation Area
Vds Drain-Source Voltage (V)
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Normalized On-Resistance
3415
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Rdson (mΩ)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
3415
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
详细参数
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