GOFORD
General Description
The G1007. combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R
DS(ON)
. This device is ideal for
power switching application and LED backlighting.
G1007.
Features
VDSS
100V
RDS(ON)
@10V (typ)
70
m
Ω
ID
7A
Schematic Diagram
●
Ultra Low On-Resistance
●
High UIS and UIS 100% Test
Application
●
Power switching application
●
LED backlighting
Marking and pin Assignment
SOP-8
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
Maximum Power Dissipation(Tc=25℃)
(Note 1)
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
Value
100
±20
7
8.5
56
28
16
-55 To 175
Unit
V
V
A
A
A
W
Single Pulse Avalanche Energy
(Note 2)
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=50V,V
G
=10V, R
G
=25Ω
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Table 2. Thermal Characteristic
Symbol
R
JC
G1007.
Parameter
Value
3.3
Unit
℃/W
Thermal Resistance,Junction-to-Case
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=100℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=4.5A
1.5
100
Typ
Max
Unit
V
1
5
±100
2.0
70
2.6
85
μA
μA
nA
V
mΩ
Dynamic Characteristics
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=4.5A
V
GS
=10V
V
DS
=50V,V
GS
=0V
f=1.0MHz
V
DS
=5V,I
D
=4.5A
5
612
120
91
11
1.9
2.8
S
PF
PF
PF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Switching Times
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=50V,R
L
=8.6Ω
V
GS
=10V,R
G
=3Ω
8
3
17
4.5
nS
nS
nS
nS
Source-Drain Diode Characteristics
I
SD
I
SDM
V
SD
t
rr
Q
rr
t
on
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Forward On Voltage
(Note 1)
(Note 1)
(Note 1)
14
56
T
J
=25℃,I
SD
=1A,V
GS
=0V
T
J
=25℃,I
F
=4.5A
di/dt=500A/μs
0.74
21
97
1
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting T
J
=25
℃
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Test Circuit
1) E
AS
Test Circuits
G1007.
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit：
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. On-Region Characteristics
G1007.
Figure 2: Transfer Characteristics
I
D
-Drain Current (A)
V
DS
Drain-Source Voltage (V)
Figure3. On-Resistance vs. Drain Current
and Gate Voltage
I
D
-Drain Current (A)
V
GS
Gate-Source Voltage (V)
Figure4. On-Resistance vs. Junction Temperature
R
DS(ON)
On-Resistance (mΩ)
I
D
- Drain Current (A)
Figure5. On-Resistance vs. Gate-Source Voltage
Normalized On-Resistance
Temperature (°C)
Figure6. Body-Diode Characteristics
R
DS(ON)
On-Resistance (mΩ)
I
s
-Reverse Drain Current (A)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
Figure7. Gate-Charge Characteristics
G1007.
Figure 8. Capacitance Characteristics
V
GS
Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 9. Maximum Forward Biased Safe
Operating Area
Figure10. Single Pulse Power Rating
Junction-to-Case
I
D
-Drain Current (A)
C Capacitance (pF)
V
DS
Drain-Source Voltage (V)
Power (W)
Pulse Width (s)
Figure11. Normalized Maximum Transient Thermal Impedance
R(t), Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
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TEL：0755-29961262
FAX：0755-29961466
Page 5
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