GOFORD
D
5P40
Description
The 5P40 uses advanced trench technology to
provide excellent R
DS(ON)
, This device is suitable for use as a
load switch and battery protection applications.
G
General Features
●
S
Schematic diagram
V
DSS
-40V
@-4.5V(Typ) @-10V (Typ)
R
DS(ON)
98
m
Ω
R
DS(ON)
73
m
Ω
I
D
-5.3
A
5P40
Marking and pin assignment
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Application
●
Battery applications
●
Load switch
SOT-23-3L
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Limit
-40
±20
-5.3
-20
2.0
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
62.5
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μA
V
DS
=-40V,V
GS
=0V
Min
-40
-
Typ
-
-
Max
-
-1
Unit
V
μA
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-2.5A
-
-
0.8
-
1.2
-5.3
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-20V,I
D
=-3.1A,
V
GS
=-10V
V
DD
=-20V, ,R
L
=2Ω
V
GS
=-10V,R
GEN
=3Ω
-
-
-
-
-
-
-
9
8
28
10
14
2.9
3.8
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-20V,V
GS
=0V,
F=1.0MHz
-
-
-
650
90
70
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V,I
D
=-4.1A
-1
-
-
10
-1.5
73
98
-
-3
5P40
Symbol
I
GSS
Condition
V
GS
=±20V,V
DS
=0V
Min
-
Typ
-
Max
±100
Unit
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
85
126
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
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