GOFORD
DESCRIPTION
The 2302. uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
2302.
D
G
GENERAL FEATURES
●
S
Schematic diagram
V
DSS
20V
@4.5V (Typ) @10V (Typ)
R
DS(ON)
24
m
Ω
R
DS(ON)
20
m
Ω
I
D
4.3
A
3
D
2302.
G 1
2 S
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
SOT-23
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
20
±12
4.3
10
1
-55 To 150
Unit
V
V
A
A
W
℃
125
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
Min
20
-
Typ
22
-
Max
-
1
Unit
V
μA
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2.9A
-
-
0.75
-
1.2
2.9
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=2.9A,
V
GS
=4.5V
V
DD
=10V,I
D
=2.9A
V
GS
=4.5V,R
GEN
=6Ω
-
-
-
-
-
-
-
10
50
17
10
4.0
0.65
1.2
15
85
45
20
10
-
-
C
lss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,
F=1.0MHz
-
-
-
300
120
80
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.9A
V
DS
=5V,I
D
=2.9A
0.5
-
-
-
0.79
20
24
8
1.2
30
35
-
I
GSS
V
GS
=±10V,V
DS
=0V
-
-
±100
2302.
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
2302.
t
off
t
f
90%
t
d(off)
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Normalized On-Resistance
2302.
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
2302.
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
r(t),Normalized Effective
Transient Thermal Impedance
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
详细参数
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