GOFORD
Description
The
2300F designed by t he trench processing
techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer
effective . These features combine to make this
design an extremely efficient and reliable device for
variety of DC-DC applications.
2300F
Features
♦
Schematic diagram
V
DSS
20V
@4.5V (Typ) @2.5V (Typ)
R
DS(ON)
20
m
Ω
R
DS(ON)
25
m
Ω
I
D
6
A
Marking and pin Assignment
♦
Low On-Resistance
♦
150°C Operating Temperature
♦
Fast Switching
♦
Lead-Free, RoHS Compliant
Application
●Battery
protection
●Load
switch
●Power
management
SOT-23
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
±12
20
150
-50 to 155
T
C
=25°C
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
I
S
6
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested
1
T
C
=25°C
T
C
=25°C
20
6
A
I
D
Continuous Drain Current(VGS=10V)
T
C
=100°C
A
4.0
1.25
135
W
°C/W
P
D
R
θ
JA
Maximum Power Dissipation
Thermal Resistance Junction-Ambient
T
C
=25°C
Vanguard Semiconductor Co., Ltd
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1 , Total 4
www.vgsemi.com
Page 1
GOFORD
Symbol
Parameter
Condition
Min
Typ
Max
2300F
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(Tc=25℃)
Zero Gate Voltage Drain Current
(Tc=125℃)
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=2.3A
V
GS
=2.5V, I
D
=2.3A
20
--
--
--
0.5
--
--
--
--
V
μA
μA
nA
V
m
Ω
m
Ω
--
--
--
0.65
20
25
0.3
100
±100
0.9
27
41
I
GSS
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
V
GS(TH)
R
DS(ON)
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=10V,I
D
=2.8A,
V
GS
=4.5V
V
DS
=10V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
630
150
60
11
1.6
2.7
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=10V,
I
D
=1A,
R
G
=6Ω,
V
GS
=4.5V,
RL=5Ω,
--
--
--
--
14.5
46
52
39
--
--
--
--
nS
nS
nS
nS
Source- Drain Diode Characteristics
I
SD
I
SDM
V
SD
Source-drain current(Body Diode)
Pulsed Source-drain current
(Body Diode)
Forward on voltage
T
j
=25℃,I
SD
=3A,
V
GS
=0V
T
c
=25℃
--
--
--
--
5.2
20
1.2
A
A
--
--
V
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Typical Characteristics
2300F
I
D
, Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
On Resistance（
mΩ
）
V
GS
, Gate -Source Voltage (V)
Fig2.
Typical Transfer Characteristics
I
S
, Source-Drain Current (A)
Tj=150°C
Tj=25°C
V
SD
, Source-Drain Voltage (V)
Fig3.
Typical Source-Drain Diode Forward Voltage
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Temperature
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 3
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
