旌芯半导½科技(上海)有限公司
GN Semiconductor (Shanghai) Co., Ltd.
GN78L05
Three-terminal positive voltage regulator
FEATURES
Maximum
output
current
I
OM
: 0.1A
Output voltage
V
O
: 5V
Continuous total dissipation
P
D
: 0.6 W
(T
a
= 25
℃
)
1. OUT
2. GND
3. IN
SOT-89-3L
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Thermal
Resistance from Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
i
R
θJA
T
OPR
T
STG
Value
30
160
-40~+125
-65
~+150
Min
4.80
25℃
Output voltage
Vo
7V≤Vi≤20V, Io=1mA~40mA
Io=1mA~70mA
Load Regulation
Line regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
*
Pulse test.
TYPICAL APPLICATION
ΔVo
ΔVo
Iq
ΔIq
ΔIq
V
N
RR
Vd
Vi
3
GN78L05
Ci
0.33μF
2
C0
0.1μF
1
8V≤Vi≤20V
1mA≤V
l
≤40mA
10Hz≤f≤100KHz
8V≤Vi≤20V,f=120Hz
Io=1mA~100mA
Io=1mA~40mA
7V≤Vi
l
≤20V
8V≤Vi≤20V
0-125℃
25℃
25℃
0-125℃
25℃
25℃
0-125℃
0-125℃
25℃
0-125
25℃
Vo
42
41
49
1.7
4.85
4.90
4.75
4.75
Typ
5.0
5.0
5.0
5.0
5.0
15
8
32
26
3.8
Unit
V
℃/W
℃
℃
Max
5.20
5.15
5.10
5.25
5.25
60
30
150
100
6
1.5
0.1
μV/Vo
dB
V
Unit
V
V
V
V
V
mV
mV
mV
mV
mA
mA
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JUNCTION TEMPERATURE (Vi=10V,Io=40mA,Ci=0.33uF,,Co=0.1uF, unless otherwise specified )
Parameter
Symbol
Test conditions
Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
Possible to the regulators.
中½(上海)自由贸易试验区芳春路400号1幢3层
http://www.gnsemic.com
电话:021-34125778
第
1
页，共
4
页
旌芯半导½科技(上海)有限公司
GN Semiconductor (Shanghai) Co., Ltd.
Output Characteristics
7
6.0
Dropout Characteristics
I
O
=0mA
T
J
=25
℃
5.5
6
T
J
=25
℃
(V)
V
O
(V)
5.0
5
OUTPUT VOLTAGE V
O
4.5
4
OUTPUT VOLTAGE
=0
m
3
3.5
3.0
1
2.5
0
0
5
10
15
20
25
30
2.0
4
5
6
7
8
9
10
O
I
=7
0m
2
O
I
A
INPUT VOLTAGE
V
IN
(V)
INPUT VOLTAGE
O
I
=1
00
m
A
A
4.0
O
I
=4
0m
A
V
IN
(V)
Quiescent Current vs Input Voltage
4.0
7
Current Cut-off Grid Voltage
I
O
=0mA
V
IN
=10V
6
3.5
T
J
=25
℃
(V)
T
J
=25
℃
Pulsed
(mA)
3.0
5
I
Q
QUIESCENT CURRENT
2.5
OUTPUT VOLTAGE
0
5
10
15
20
25
30
V
O
4
3
2
1
0
0.00
2.0
1.5
1.0
0.5
0.0
0.05
0.10
0.15
0.20
0.25
INPUT VOLTAGE
V
IN
(V)
OUTPUT CURRENT
I
O
(A)
Output Voltage vs Junction Temperature
6.0
800
Power Derating Curve
V
in
=10V
I
O
=5mA
(V)
5.5
700
(mW)
P
D
POWER DISSIPATION
600
OUTPUT VOLTAGE V
O
500
5.0
400
300
4.5
200
100
4.0
-40
-25
0
25
50
75
100
125
0
-40
-25
0
25
50
75
100
125
JUNCTION TEMPERATURE
T
J
(
℃
)
JUNCTION TEMPERATURE
T
J
(
℃
)
中½(上海)自由贸易试验区芳春路400号1幢3层
http://www.gnsemic.com
电话:021-34125778
第
2
页，共
4
页
旌芯半导½科技(上海)有限公司
GN Semiconductor (Shanghai) Co., Ltd.
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
GN
GN
中½(上海)自由贸易试验区芳春路400号1幢3层
http://www.gnsemic.com
电话:021-34125778
第
3
页，共
4
页
嵌入式系统
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