GS8551/8552/8554
1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
•
•
•
•
•
•
•
•
Single-Supply Operation from +1.8V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 1.8MHz (Typ. @25°C)
Low Input Bias Current: 20pA (Typ. @25°C)
Low Offset Voltage: 30µV (Max. @25°C)
Quiescent Current: 180µA per Amplifier (Typ)
Operating Temperature: -45°C ~ +125°C
Zero Drift: 0.03µV/ C (Typ)
o
•
•
Embedded RF Anti-EMI Filter
Small Package:
GS8551 Available in SOT23-5 and SOP-8 Packages
GS8552 Available in MSOP-8 and SOP-8 Packages
GS8554 Available in SOP-14 and TSSOP-14 Packages
General Description
The GS855X amplifier is single/dual/quad supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer
bandwidth of 1.8MHz, rail-to-rail inputs and outputs, and single-supply operation from 1.8V to 5.5V. GS855X uses chopper
stabilized technique to provide very low offset voltage (less than 5µV maximum) and near zero drift over temperature. Low
quiescent supply current of 180µA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low
offset, low power consumption and high impedance applications. The GS855X offers excellent CMRR without the crossover
associated with traditional complementary input stages. This design results in superior performance for driving analog-to-digital
converters (ADCs) without degradation of differential linearity.
The GS8551 is available in SOT23-5 and SOP-8 packages. And the GS8552 is available in MSOP-8 and SOP-8 packages. The
GS8554 Quad is available in Green SOP-14 and TSSOP-14 packages. The extended temperature range of -45 C to +125 C
over all supply voltages offers additional design flexibility.
o
o
Applications
•
•
•
Transducer Application
Temperature Measurements
Electronics Scales
•
•
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
Figure 1. Pin Assignment Diagram
V2
1/14
GS8551/8552/8554
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-55°C
+260°C
)
125°C/W
216°C/W
190°C/W
Min
-0.5V
Vss-0.5V
Vss-0.5V
-45°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
SOP-8, θ
JA
MSOP-8, θ
JA
SOT23-5, θ
JA
ESD Susceptibility
HBM
MM
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Package/Ordering Information
MODEL
CHANNEL
ORDER NUMBER
GS8551-TR
GS8551-SR
GS8552-SR
GS8552-MR
GS8554-TR
GS8554-SR
PACKAGE
DESCRIPTION
SOT23-5
SOP-8
SOP-8
MSOP-8
TSSOP-14
SOP-14
PACKAGE
OPTION
Tape and Reel,3000
Tape and Reel,4000
Tape and Reel,4000
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,2500
MARKING
INFORMATION
8551
GS8551
GS8552
GS8552
GS8554
GS8554
GS8551
Single
GS8552
Dual
GS8554
Quad
V2
℃
Package Thermal Resistance (T
A
=+25
6KV
400V
2/14
GS8551/8552/8554
Electrical Characteristics
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode
(CMRR)
Large Signal Voltage Gain ( A
VO
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
R
L
=10Ω to - V
S
4.998
4.994
2
5
60
65
Rejection
Ratio
V
CM
= 0V to 5V
R
L
= 10kΩ, V
O
= 0.3V to 4.7V
1
20
10
110
145
30
30
µV
pA
pA
dB
dB
V
V
mV
mV
mA
mA
Output Voltage Low (V
OL
)
Short Circuit Limit (I
SC
)
Output Current (I
O
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
Quiescent Current (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
Overload Recovery Time
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
V
S
= 2.5V to 5.5V
V
O
= 0V, R
L
= 0Ω
115
180
dB
µA
G = +100
R
L
= 10kΩ
1.8
0.95
0.10
MHz
V/µs
ms
0Hz to 10Hz
f = 1kHz
0.3
38
µV
P-P
nV
/
Hz
V2
3/14
℃
℃
(V
S
= +5V, V
CM
= +2.5V, V
O
= +2.5V, T
A
= +25
, unless otherwise noted.)
CONDITIONS
MIN
TYP
MAX
UNITS
nV/
GS8551/8552/8554
Typical Performance characteristics
Large Signal Transient Response at +5V
C
L
=300pF
R
L
=2kΩ
A
V
=+1
Large Signal Transient Response at +2.5V
C
L
=300pF
R
L
=2kΩ
A
V
=+1
Time(4µs/div)
Output Voltage (500mV/div)
Output Voltage (1V/div)
Time(2µs/div)
Small Signal Transient Response at +5V
C
L
=50pF
R
L
=∞
A
V
=+1
Small Signal Transient Response at +2.5V
C
L
=50pF
R
L
=∞
A
V
=+1
Output Voltage (50mV/div)
Time(4µs/div)
Output Voltage (50mV/div)
Time(4µs/div)
Closed Loop Gain vs. Frequency at +5V
G=-100
Closed Loop Gain (dB)
Closed Loop Gain (dB)
Closed Loop Gain vs. Frequency at +2.5V
G=-100
G=-10
G=-10
G=+1
G=+1
Frequency (kHz)
Frequency (kHz)
V2
4/14
GS8551/8552/8554
Typical Performance characteristics
Open Loop Gain, Phase Shift
vs. Frequency at +5V
Open Loop Gain, Phase Shift
vs. Frequency at +2.5V
Phase Shift(Degrees)
Phase Shift
V
L
=0pF
R
L
=∞
Phase Shift
V
L
=0pF
R
L
=∞
Open Loop Gain
Open Loop Gain
Frequency (Hz)
Frequency (Hz)
Positive Overvoltage Recovery
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-100
Negative Overvoltage Recovery
Open Loop Gain (dB)
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-100
Time (40µs/div)
Time (40µs/div)
0.1Hz to 10Hz Noise at +5V
G=10000
Noise (2mv/div)
Noise (2mv/div)
0.1Hz to 10Hz Noise at +2.5V
G=10000
Time (10s/div)
Time (10s/div)
V2
5/14
Phase Shift(Degrees)
Open Loop Gain (dB)
Open Loop Gain (dB)
±
±
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
