GS333
350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
Single-Supply Operation from +1.8V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 350KHz (Typ. @25°C)
Low Input Bias Current: 20pA (Typ. @25°C)
Low Offset Voltage: 10uV (Max. @25°C)
Quiescent Current: 25μA per Amplifier (Typ.)
Operating Temperature: -45°C ~ +125°C
Zero Drift: 0.03µV/°C (Max.)
Embedded RF Anti-EMI Filter
Small Package:
GS333 Available in SOT23-5, SC-70 and SOP-8
Packages
General Description
The GS333 amplifier is single/dual supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer bandwidth of
350 kHz, rail-to-rail inputs and outputs, and single-supply operation from 1.8V to 5.5V. GS833X uses chopper stabilized
technique to provide very low offset voltage (less than 10µV maximum) and near zero drift over temperature. Low quiescent
supply current of 25μA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low offset, low
power consumption and high impedance applications.
The
GS833X
offers excellent CMRR without the crossover associated
with traditional complementary input stages. This design results in superior performance for driving analog-to-digital
converters (ADCs) without degradation of differential linearity.
The GS333 is available in SOT23-5, SC-70 and SOP8 packages. The extended temperature range of -45 C to +125 C over all
supply voltages offers additional design flexibility.
o
o
Applications
Transducer Application
Temperature Measurements
Electronics Scales
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
Figure 1. Pin Assignment Diagram
V1
1/14
GS333
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
Package Thermal Resistance (T
A
=+25℃)
SOT23-5, θ
JA
ESD Susceptibility
HBM
MM
6KV
400V
190°C/W
-55°C
+260°C
Min
-0.5V
Vss-0.5V
Vss-0.5V
-45°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Package/Ordering Information
MODEL
CHANNEL
ORDER NUMBER
GS333-TR
GS333
Single
GS333Y-TR
GS333-CR
GS333-SR
PACKAGE
DESCRIPTION
SOT23-5
SOT23-5
SC70-5
SOP-8
PACKAGE
OPTION
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,4000
MARKING
INFORMATION
333
333Y
333
GS333
V1
2/14
GS333
Electrical Characteristics
(At Vs=5V, TA = +25℃, VCM = VS/2, RL = 10KΩ, unless otherwise noted.)
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode
(CMRR)
Large Signal Voltage Gain ( A
VO
)
Input Offset Voltage Drift (ΔV
OS
/Δ
T
)
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
R
L
=10Ω to - V
S
4.998
4.994
5
20
20
30
V
V
mV
mV
mA
mA
Rejection
Ratio
V
CM
= 0V to 5V
R
L
= 10kΩ, V
O
= 0.3V to 4.7V
2
20
10
110
145
50
10
μV
pA
pA
dB
dB
nV/℃
CONDITIONS
MIN
TYP
MAX
UNITS
Output Voltage Low (V
OL
)
Short Circuit Limit (I
SC
)
Output Current (I
O
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
Quiescent Current (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
V
S
= 2.5V to 5.5V
V
O
= 0V, R
L
= 0Ω
115
25
dB
μA
G = +100
R
L
= 10kΩ
350
0.2
KHz
V/μs
0Hz to 10Hz
f = 1kHz
1.1
70
μV
P-P
nV
/
Hz
V1
3/14
GS333
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Large Signal Transient Response
C
L
=0pF
G=+1
Large Signal Transient Response
C
L
=0pF
G=+1
Time(40µs/div)
Output Voltage (50mV/div)
Output Voltage (1V/div)
Time(4µs/div)
Positive Overvoltage Recovery
V
SY
=±2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
Negative Overvoltage Recovery
Output Voltage (50mV/div)
V
SY
=±2.5V
V
IN
=-200mVp-p
(RET
to
GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
Time (50µs/div)
Time (50µs/div)
Open Loop Gain, Phase Shift vs. Frequency
Phase Shift
Open Loop Gain (dB)
Supply Current (µA)
Supply Current vs. Temperature
V
S
=5.5V
Open Loop Gain
V
s
=1.8V
Frequency (Hz)
Temperature (
℃
)
V1
4/14
GS333
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Output Voltage Swing vs.Output Current at +3V
Sourcing Current
Output Voltage (V)
Output Voltage (V)
Output Voltage Swing vs.Output Current at +5V
Sourcing Current
125℃ 25℃
-40℃
125℃ 25℃
-40℃
Sinking Current
Sinking Current
Output Current(mA)
Output Current(mA)
V1
5/14
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
