GS8331/32
350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
•
•
•
•
•
•
•
•
Single-Supply Operation from +2.1V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 350KHz (Typ. @25°C)
Low Input Bias Current: 20pA (Typ. @25°C)
Low Offset Voltage: 10uV (Max. @25°C)
Quiescent Current: 20µA per Amplifier (Typ.)
Operating Temperature: -40°C ~ +125°C
Zero Drift: 0.05µV/°C (Max.)
•
•
Embedded RF Anti-EMI Filter
Small Package:
GS8331 Available in SOT23-5 and SOP-8 Packages
GS8332 Available in MSOP-8, SOP-8 and DFN-8
Packages
General Description
The GS833X amplifier is single/dual supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer bandwidth
of 350 kHz, rail-to-rail inputs and outputs, and single-supply operation from 2.1V to 5.5V. GS833X uses chopper stabilized
technique to provide very low offset voltage (less than 10µV maximum) and near zero drift over temperature. Low quiescent
supply current of 20µA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low offset, low
power consumption and high impedance applications.
The
GS833X
offers excellent CMRR without the crossover associated
with traditional complementary input stages. This design results in superior performance for driving analog-to-digital
converters (ADCs) without degradation of differential linearity.
The GS8331 is available in SOT23-5 and SOP8 packages. And the GS8332 is available inMSOP8, SOP8 and DFN-8
packages. The extended temperature range of -40 C to +125 C over all supply voltages offers additional design flexibility.
o
o
Applications
•
•
•
Transducer Application
Temperature Measurements
Electronics Scales
•
•
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
GS8332
OUTA 1
INA- 2
INA+ 3
VSS 4
DFN-8
8
VDD
7 OUTB
6 INB-
5 INB+
Figure 1. Pin Assignment Diagram
A0
1/13
GS8331/32
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-55°C
+260°C
)
125°C/W
216°C/W
190°C/W
Min
-0.5V
Vss-0.5V
Vss-0.5V
-40°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
SOP-8, θ
JA
MSOP-8, θ
JA
SOT23-5, θ
JA
ESD Susceptibility
HBM
MM
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Package/Ordering Information
MODEL
CHANNEL
ORDER NUMBER
GS8331-TR
GS8331
Single
GS8331-CR
GS8331Y-SR
GS8332-SR
GS8332
Dual
GS8332-MR
GS8332-FR
PACKAGE
DESCRIPTION
SOT23-5
SC70-5
SOP-8
SOP-8
MSOP-8
DFN-8
PACKAGE
OPTION
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,2500
Tape and Reel,2500
Tape and Reel,3000
Tape and Reel,3000
MARKING
INFORMATION
8331
8331
GS8331Y
GS8332
GS8332
GS8332
A0
℃
Package Thermal Resistance (T
A
=+25
2KV
200V
2/13
GS8331/32
Electrical Characteristics
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode
(CMRR)
Large Signal Voltage Gain ( A
VO
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
R
L
=10Ω to - V
S
4.998
4.994
5
20
20
20
Rejection
Ratio
V
CM
= 0V to 5V
R
L
= 10kΩ, V
O
= 0.3V to 4.7V
2
20
10
110
145
50
10
µV
pA
pA
dB
dB
V
V
mV
mV
mA
mA
Output Voltage Low (V
OL
)
Short Circuit Limit (I
SC
)
Output Current (I
O
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
Quiescent Current (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
V
S
= 2.5V to 5.5V
V
O
= 0V, R
L
= 0Ω
115
20
dB
µA
G = +100
R
L
= 10kΩ
350
0.2
KHz
V/µs
0Hz to 10Hz
f = 1kHz
1.1
70
µV
P-P
nV
/
Hz
A0
3/13
℃
℃
(At Vs=5V, TA = +25
, VCM = VS/2, RL = 10KΩ, unless otherwise noted.)
CONDITIONS
MIN
TYP
MAX
UNITS
nV/
GS8331/32
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Large Signal Transient Response
C
L
=0pF
G=+1
Large Signal Transient Response
C
L
=0pF
G=+1
Time(40µs/div)
Output Voltage (50mV/div)
Output Voltage (1V/div)
Time(4µs/div)
Positive Overvoltage Recovery
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
Negative Overvoltage Recovery
Output Voltage (50mV/div)
Time (50µs/div)
Time (50µs/div)
Open Loop Gain, Phase Shift vs. Frequency
Phase Shift
Open Loop Gain (dB)
Supply Current (µA)
Supply Current vs. Temperature
V
S
=5.5V
Open Loop Gain
V
s
=1.8V
A0
℃
Frequency (Hz)
Temperature ( )
±
±
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET
to
GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
4/13
GS8331/32
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Output Voltage Swing vs.Output Current at +3V
Sourcing Current
Output Voltage (V)
Output Voltage (V)
Output Voltage Swing vs.Output Current at +5V
Sourcing Current
125
Sinking Current
Output Current(mA)
Output Current(mA)
A0
℃
Sinking Current
℃ ℃
125
℃
℃ ℃
25
-40
25
-40
5/13
单片机
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