SOT-23 Plastic-Encapsulate Transistors
MMBT5401
TRANSISTOR (PNP)
Formosa MS
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
-
FEATURES
Complementary to MMBT5551
Ideal for medium power amplification and switching
MARKING: 2L
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.6
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
Test
conditions
I
E
=0
I
B
=0
MIN
-160
-150
-5
-0.1
-0.1
80
100
50
-0.5
-1
100
V
V
MHz
300
MAX
UNIT
V
V
V
I
C
= -100
μ
A,
I
C
= -1mA,
I
E
= -10
μ
A, I
C
=0
V
CB
=-120 V , I
E
=0
V
EB
=-4V ,
V
CE
= -5V,
V
CE
= -5V,
V
CE
= -5V,
I
C
=0
I
C
= -1mA
I
C
=-10mA
I
C
=-50mA
μ
A
μ
A
I
C
=-50 mA, I
B
= -5mA
I
C
= -50 mA, I
B
= -5mA
V
CE
= -5V,
I
C
= -10mA
f
T
f=
30MHz
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 1
DS-222646
详细参数
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