SMD NPN Transistor
MMBT2222 / MMBT2222A
General Purpose Transistor
NPN Silicon
Formosa MS
SOT-23
Features
•
High collector-emitterbreakdien voltage.
•
•
•
•
(BV
CEO
= 40V@I
C
=10mA)
S mall load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
Capable of 225mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.MMBT2222-H.
Package outline
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.007 (0.18)
0.012 (0.30)
0.003 (0.09)
0.051 (1.30)
0.035 (0.89)
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total device dissipation FR-5 board
(1)
Thermal resistance(1)
Total device dissipation alumina
substrate(2)
Thermal resistance(2)
Operating junction temperature range
Storage temperature range
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
T
A
= 25
O
C
Derate above 25
O
C
Junction to ambient
O
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
MMBT2222
60
30
5.0
MMBT2222A
75
40
6.0
UNIT
V
V
V
mA
mW
mW/
O
C
O
600
225
1.8
R
θJA
P
D
556
300
2.4
C/W
mW
mW/
O
C
O
R
θJA
T
J
T
STG
417
-55 to +150
-55 to +150
C/W
o
C
C
o
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
6
Page 1
FM-3140011
SMD NPN Transistor
MMBT2222 / MMBT2222A
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
Formosa MS
(TA = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
MMBT2222A ONLY
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
6
Page 2
FM-3140011
SMD NPN Transistor
MMBT2222 / MMBT2222A
ELECTRICAL CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
Formosa MS
(T A = 25°C unless otherwise noted) (Continued)
κΩ
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
μ
MMBT2222A
MMBT2222A
MMBT2222A
(I
C
=100
μ
Adc, V
CE
=10Vdc, R
S=
1.0k
Ω
, f=1.0 kHz)
MMBT2222A
SWITCHING CHARACTERISTICS(FMBT2222A only)
3.Pulse Test:Pulse Width 300 μ s, Duty Cycle 2.0%.
4.f
T
is defined as the frequency at which Ihfe extrapolates to unity.
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
6
Page 3
FM-3140011
SMD NPN Transistor
Formosa MS
V
CESAT
COLLECTOR-EMITTER VOLTAGE (V)
Rating and characteristic curves (MMBT2222 / MMBT2222A)
hFE
-TYPICAL
PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
VCE
=
5V
400
300
200
25 C
100
-40
C
0
0
.
1
0
.
3
1
3
10
30
100
Ic
-
COLLECTOR CURRENT
(
mA
)
300
125 C
Collector
-
Emitter Saturation
Voltage vs Collector Current
0
.
4
b
=
10
0
.
3
125 C
25 C
0
.
1
-40
C
1
10
100
500
0
.
2
Ic
-
COLLECTOR CURRENT
(
mA
)
Base
-
Emitter Saturation
Voltage vs Collector Current
V
BESAT
BASE-EMITTER VOLTAGE (V)
1
b
=
10
Base
-
Emitter ON Voltage vs
Collector Current
V
BE
(
ON
)
BASE-EMITTER ON VOLTAGE (V)
1
VCE
=
5V
0
.
8
-40
C
0
.
6
25 C
0
.
8
-40
C
25 C
0
.
6
125 C
0
.
4
125 C
0
.
4
1
10
100
500
0
.
2
0
.
1
1
10
25
Ic
-
COLLECTOR CURRENT
(
mA
)
Ic
-
COLLECTOR CURRENT
(
mA
)
C0llector
-
Cutoff Current vs
Ambient Temperature
I
CBO
COLLECTOR CURRENT (nA)
500
100
10
1
0
.
1
VCB
=40V
20
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
f
=
1MHz
CAPACITANCE
(
pF
)
16
12
8
4
Cob
0
.
1
1
10
100
Cib
25
50
75
100
125
150
TA
-
AMBIENT TEMPERATURE
(
C
)
REVERSE BIAS VOLTAGE
(
V
)
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
6
Page 4
FM-3140011
详细参数
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