SMD PNP Transistor
MMBT2907 / MMBT2907A
General Purpose PNP Transistor
Package outline
Formosa MS
SOT-23
Features
0.045 (1.15)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
•
•
•
purpose and amplifier applications.
Capable of 225mW power dissipation.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free part, ex.MMBT2907-H.
0.034 (0.85)
•
High collector-emitterbreakdien voltage.
•
PNP silicon epitaxial planar transistor, is designed for general
0.020 (0.50)
(C)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.007 (0.18)
0.012 (0.30)
0.003 (0.09)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current - continuous
Total device dissipation FR-5 board T
A
= 25 C
(1)
Derate above 25
O
C
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Storage temperature range
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Junction to ambient
T
A
= 25
O
C
Derate above 25
O
C
Junction to ambient
O
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
MMBT2907
-40
-60
MMBT2907A
-60
UNIT
V
V
V
mA
mW
mW/
O
C
O
-5.0
-600
225
1.8
R
θJA
P
D
556
300
2.4
C/W
mW
mW/
O
C
O
R
θJA
T
J
T
STG
417
-55 to +150
-55 to +150
C/W
o
Operating junction temperature range
C
C
o
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
6
Page 1
FM-3140012
SMD PNP Transistor
MMBT2907 / MMBT2907A
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MMBT2907
MMBT2907A
Formosa MS
(TA = 25°C unless otherwise noted)
uA
uA
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907A
uAdc
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
6
Page 2
FM-3140012
SMD PNP Transistor
MMBT2907 / MMBT2907A
ELECTRICAL CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
Formosa MS
(T A = 25°C unless otherwise noted) (Continued)
SWITCHING CHARACTERISTICS
1 . Pulse Test : Pulse Width ≤300 μ s , Duty Cycle ≤2 . 0 %.
2 . f
T
is defined as the frequency at which | h f e | extrapolates to unity .
INPUT
Z o = 50
Ω
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. <200 ns
1.0 k
0
-16 V
200 ns
50
INPUT
-30V
200
Z
O
= 50Ω
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
Figure 2. Storage and Fall T ime Test Circuit
50
1N916
+15 V
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
Figure 1. Delay and Rise T ime Test Circuit
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
6
Page 3
FM-3140012
SMD PNP Transistor
MMBT2907 / MMBT2907A
Rating and characteristic curves
3.0
Formosa MS
25
°
C
h
FE
, NORMALIZED CURRENT GAIN
2.0
V
CE
= - 1.0 V
V
CE
= -10 V
T
J
= 125
°
C
1.0
0.7
0.5
-55
°
C
0.3
0.2
-0.1
-0.2
-1.0
-2.0
-10
-100
-500
I
C
, COLLECTOR CURREN (mA)
Figure 3. DC Current Gain
-1.0
V
CE
, COLLECTOR-EMITTER
-0.8
I
C
= -1.0 mA
-10 mA
-100 mA
-500 mA
VOLTAGE (VOLTS)
-0.6
-0.4
-0.2
0
-0.005
-0.1
-1.0
-10
-50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
300
200
100
300
V
CC
= -30 V
t
r
I
C
/I
B
= 10
T
J
= 25
°
C
200
100
V
CC
= -30 V
I
C
/I
B
= 10
t
f
I
B1
= I
B2
T
J
= 25
°
C
t, TIME (ns)
t, TIME (ns)
70
50
30
20
70
50
30
20
10
7.0
t '
s
= t
s
-1/8 t
f
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
2.0 V
5.0
3.0
-5.0
-10
-100
-500
-5.0
-10
-100
-500
I
C
, COLLECTOR CURRENT
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn-On T ime
Figure 6. Turn-off Time
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
6
Page 4
FM-3140012
SMD PNP Transistor
MMBT2907 / MMBT2907A
Rating and characteristic curves
TYPICAL SMALL-SIGNAL CHARACTERISTICS
V
CE
10
Formosa MS
NOISE FIGURE
= 10 Vdc, T
A
= 25°C
10
f=1.0 kHz
8.0
8.0
NF, NOISE FIGURE (dB)
6.0
I
C
= -1.0 mA, R
S
= 430
Ω
-500 μ A, R
S
= 560
Ω
-50 μA, R
S
= 2.7 k
Ω
-100μ A, R
S
= 1.6 k
Ω
NF, NOISE FIGURE (dB)
6.0
4.0
4.0
I
C
= -50 μA
-100 μA
-500 μA
-1.0 mA
2.0
R
S
=OPT MUM SOURCE RESISTANCE
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (
Ω
)
Figure 7. Frequency Effects
30
20
400
Figure 8. Source Resistance Effects
C
eb
f
T
, CURRENT-GAIN -BANDWIDTH
300
200
C, CAPACITANCE(pF)
10
7.0
5.0
PRODUCT (MHz)
100
80
60
V
CE
=-20 V
T
J
= 25
°
C
C
cb
40
30
20
-1.0
3.0
2.0
-0.1
-1.0
-10
-30
-10
-100
-1000
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
-1.0
Figure 10. Current-Gain-Bandwidth Product
+0.5
T
J
= 25
°
C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
0
R
θVC
for V
CE(sat)
COEFFICIENT (mV/
°
C)
V, VOLTAGE (VOLTS)
-0.6
V
BE(on)
@ V
CE
= -10 V
-0.5
-1.0
-0.4
-1.5
-0.2
-2.0
R
θVB
for V
BE
V
CE(sat)
@ I
C
/I
B
= 10
0
-0.1
-1.0
-10
-100
-500
-2.5
-0.1
-1.0
-10
-100
-500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. "On” Voltage
Figure 12. Temperature Coefficients
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
6
Page 5
FM-3140012
详细参数
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