JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2153
FEATURES
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
Low saturation voltage
Excellent DC current gain characteristics
MARKING: DN
MAXIMUM RATINGS(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
R
θJA
T
J
T
stg
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Pulsed Collector Current
Collector Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Parameter
Value
30
25
6
2
3
0.5
250
150
-55~+150
Unit
V
V
V
A
A
W
℃/
W
℃
℃
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector capacitance
*Single pulse, P
W
=10ms
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
*
Test conditions
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=500mA
I
C
=1A,I
B
=20mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=10V, I
E
=0,f=1MHz
Min
30
25
6
Typ
Max
Unit
V
V
V
0.5
0.5
560
2700
0.5
110
22
μA
μA
V
MHz
pF
CLASSIFICATION OF h
FE
Rank
Range
U
560~1200
V
820~1800
W
1200~2700
B,Apr,2012
Typical Characterisitics
Static Characteristic
800
2SD2153
h
FE
—— I
C
T
a
=100
℃
500uA
5000
450uA
400uA
350uA
COMMON
EMITTER
T
a
=25
℃
300uA
250uA
(mA)
600
h
FE
T
a
=25
℃
1000
I
C
COLLECTOR CURRENT
400
200uA
150uA
200
100uA
I
B
=50uA
DC CURRENT GAIN
COMMON EMITTER
V
CE
=6V
100
8
1
10
100
1000
2000
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
1000
——
I
C
2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1000
100
T
a
=100
℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
10
1
1
10
100
β=50
1000 2000
100
1
10
100
β=50
1000
2000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
2000
1000
—— V
BE
1000
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
(mA)
(pF)
I
C
T=
a
10
0
℃
100
COLLECTOR CURRENT
C
100
T=
a
25
℃
C
ib
C
ob
CAPACITANCE
COMMON EMITTER
V
CE
=6V
0.9
1.2
10
10
1
0.0
0.3
0.6
1
0.1
1
10
30
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
f
T
300
—— I
C
0.6
P
c
——
T
a
(MHz)
0.5
100
COLLECTOR POWER DISSIPATION
Pc (W)
100
f
T
0.4
TRANSITION FREQUENCY
0.3
0.2
0.1
VCE=10V
o
T
a
=25 C
10
5
10
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
B,Apr,2012