JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance
from
Junction
to Ambient
℃
Junction Temperature
Storage Temperature
Value
60
50
5
150
400
312
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
Test
conditions
Min
60
50
5
0.1
0.1
0.1
70
700
0.25
1
80
3.5
10
V
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
uA
uA
uA
I
C
= 100uA, I
E
0
=
I
C
== 0
0. 1mA, I
B
I
E
= 0
= 100uA, I
C
= 0
V
CB
= 60V,I
E
= 0
V
CE
= 50V, I
B
V
EB
=5V,I
C
I
EBO
= 0
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
V
CE
= 6 V, I
C
= 2mA
I
C
=100mA, I
B
10mA
=
I
C
=100mA, I
B
10mA
=
V
CE
=10 V, I
C
= 1mA
f=30MHz
V
CB
=10V,I
E
=0
f=1MHz
V
CE
=6V,I
C
=0.1mA
f =1KHz,R
G
=10K
CLASSIFICATION OF
Rank
Range
h
FE
O
70-140
Y
120-240
GR
200-400
BL
350-700
AB,Oct,2012
Typical Characteristics
0.012
C1815
h
FE
——
I
C
COMMON EMITTER
V
CE
=6V
T
a
=100
℃
Static Characteristic
60uA
COMMON EMITTER
T
a
=25
℃
1000
0.010
(A)
54uA
h
FE
DC CURRENT GAIN
48uA
42uA
I
C
COLLECTOR CURRENT
0.008
0.006
36uA
30uA
T
a
=25
℃
100
0.004
24uA
18uA
0.002
12uA
I
B
=6uA
0.000
0
2
4
6
8
10
12
10
0.2
1
10
100 150
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1
V
CEsat
——
I
C
β=10
2
V
BEsat
——
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.3
1
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=100
℃
0.03
T
a
=25
℃
0.01
0.1
1
10
100 150
0.1
0.1
1
10
100 150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
150
100
I
C
——
V
BE
20
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
(mA)
10
T=
a
10
0
℃
COLLECTOR CURRENT
T=
a
25
℃
10
CAPACITANCE
C
(pF)
C
ib
I
C
1
C
ob
0.1
0.0
COMMON EMITTER
V
CE
=6V
0.2
0.4
0.6
0.8
1.0
1.2
1
0.2
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
f
T
——
I
C
COMMON EMITTER
V
CE
=10V
500
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
400
TRANSITION FREQUENCY
f
T
300
100
200
100
10
0.4
0
1
3
10
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
AB,Oct,2012