JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1188
FEATURES
Low V
CE(sat)
.
Complements the 2SD1766
3. EMITTER
TRANSISTOR (PNP)
SOT-89-3L
1. BASE
2. COLLECTOR
1
2
3
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base
Voltage
Value
-40
-32
-5
-2
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test conditions
I
C
=-50μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-20 V , I
E
=0
V
EB
=-4 V , I
C
=0
V
CE
=-3V, I
C
= -0.5A
I
C
=-2A, I
B
= -0.2A
V
CE
=-5V, I
C
=-0.5A ,f=30MHz
V
CB
=-10V, I
E
=0 ,f=1MHz
100
50
82
Min
-40
-32
-5
-1
-1
390
-0.8
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
f
T
C
ob
*
Measured using pulse current.
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
BCP
Q
120-270
BCQ
R
180-390
BCR
B,Mar,2012
Typical Characteristics
-0.7
2SB1188
1000
Static Characteristic
COMMON EMITTER
T
a
=25
℃
h
FE
-2.0mA
-1.8mA
-1.6mA
h
FE
——
I
C
-0.6
(A)
T
a
=100
℃
T
a
=25
℃
COLLECTOR CURRENT
-0.4
-1.4mA
-1.2mA
DC CURRENT GAIN
-0.5
I
C
100
-0.3
-1.0mA
-0.2
-0.8mA
-0.6mA
-0.1
-0.4mA
I
B
=-0.2mA
COMMON EMITTER
V
CE
= -3V
10
-6
-5
-10
-100
-1000
-2000
-0.0
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
-2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-1000
-100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
-10
T
a
=25
℃
-1
-1
-10
-100
β=10
-1000
-2000
-100
-0.1
β=10
-1
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
-10
I
C
-100
(mA)
-1000 -2000
-2000
-1000
I
C
——
V
BE
C
ob
/C
ib
300
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
(mA)
C
ib
100
-100
I
C
(pF)
COLLECTOR CURRENT
T=
a
10
0
℃
C
ob
T=
a
25
℃
-10
CAPACITANCE
COMMON EMITTER
V
CE
= -3V
C
10
1
-0.1
-1
-0.1
-0
-200
-400
-600
-800
-1000
-1200
-1
-10
-20
BASE-EMMITER VOLTAGE V
BE
(mV)
REVERSE VOLTAGE
V
(V)
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
400
300
200
100
0
0
25
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
B,Mar,2012
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