JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
A94
FEATURES
High voltage
1. BASE
TRANSISTOR (PNP)
SOT-89-3L
1
2
3
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Parameter
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current- Pulsed
Collector Power Dissipation
Junction Temperature
storage Temperature
Value
-400
-400
-5
-0.2
-0.3
0.5
150
-55~+150
Unit
V
V
V
A
A
W
℃
℃
℃
Value
2. COLLECTOR
3. EMITTER
Unit
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR) CBO
V
(BR) CEO
V
(BR) EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
V
CE (sat)
Collector-emitter saturation voltage
V
CE (sat)
Base-emitter saturation voltage
Transition frequency
V
BE (sat)
f
T
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
= -1mA
V
CE
=-20V, I
C
=-10mA
f =30MHz
50
-0.3
-0.75
V
V
MHz
V
CE
=-10V, I
C
=-100mA
V
CE
=-10V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
60
80
-0.2
V
Test conditions
I
C
= -100μA, I
E
=0
I
C
= -1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
80
70
Min
-400
-400
-5
-0.1
-5
-0.1
300
Typ
Max
Unit
V
V
V
μA
μA
μA
B,May,2012
B,May,2012
Typical Characteristics
-14
A94
h
FE
——
I
C
COMMON EMITTER
V
CE
= -10V
T
a
=100
℃
Static Characteristic
-100uA
-90uA
COMMON
EMITTER
T
a
=25
℃
h
FE
500
-12
300
(mA)
-10
I
C
-80uA
-70uA
-60uA
COLLECTOR CURRENT
DC CURRENT GAIN
-8
100
T
a
=25
℃
-6
-50uA
-40uA
-4
-30uA
-20uA
I
B
=-10uA
30
-2
-0
-0
-4
-8
-12
-16
-20
10
-1
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-10
V
CEsat
——
I
C
-1000
V
BEsat
——
T
a
=25
℃
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-3
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-1
T
a
=100
℃
-0.3
-300
-0.1
T
a
=100
℃
T
a
=25
℃
-0.03
β=10
-0.01
-1
-3
-10
-30
-100
-200
-100
-1
β=10
-3
-10
-30
-100
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-200
I
C
——
V
BE
100
f
T
——
I
C
(mA)
I
C
TRANSITION FREQUENCY
COLLECTOR CURRENT
T =1
00
℃
a
-30
T =2
5
℃
a
f
T
-10
30
-3
(MHz)
-100
COMMON EMITTER
V
CE
=-10V
-1
-200
-400
-600
-800
-1000
COMMON EMITTER
V
CE
= -20V
T
a
=25
℃
10
-3
-10
-30
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
300
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
600
P
C
——
T
a
C
ib
100
500
(pF)
400
C
30
C
ob
CAPACITANCE
300
10
200
3
100
1
-0.1
0
-0.3
-1
-3
-10
-20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,May,2012
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