JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-
L
Plastic-Encapsulate MOSFETS
CJ 3415
V
(BR)DSS
-20V
P-Channel 20V(D-S) MOSFET
R
DS(on)
MAX
50mΩ@
-4.5V
60mΩ
@
-2.5V
73
mΩ@-1. 8V
I
D
-4.0A
SOT-23-6L
FEATURE
Excellent R
DS(ON)
, low gate charge,low gate voltage
High power and current handing capability
APPLICATION
Load switch and in PWM applicatopns
MARKING:
Equivalent Circuit
PIN1
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t≤10s)
Pulsed
Drain Current
(note1)
Maximum Power Dissipation (t≤10s)
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
-20
±8
-4.0
-30
0.35
357
150
-55 ~+150
Unit
V
A
A
W
℃/W
℃
℃
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1
D,Aug,2015
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
Static Parameters
Drain-source breakdown voltage
Gate threshold voltage
(note2)
Gate-body leakage current
Zero gate voltage drain current
V
(BR) DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±8V
V
DS
=0V, V
GS
=±4.5V
V
DS
=-16V, V
GS
=0V
V
GS
=-4.5V, I
D
=-4A
Drain-source on-state resistance(note2)
R
DS(on)
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-2A
Forward transconductance(note2)
Dynamic Parameters
(note3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Parameters(note3)
Total gate charge
Gate-Source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Maximum continuous drain-source diode
forward current
V
D
s
I
S
V
GS
= 0V, I
S
=-1A
-1
-4
V
A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-10V,
V
GS
=-4.5V
R
GEN
=3Ω,
R
L
=2.5Ω,
V
DS
=-10V,V
GS
=-4.5V,I
D
=-4A
17.2
1.3
4.5
9.5
17
94
35
ns
nC
C
iss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,f =1MHz
1450
205
160
pF
g
FS
V
DS
=-5V, I
D
=-4A
8
37
45
56
16
-20
-0.3
-0.56
-1
±10
±1
-1
50
60
73
S
mΩ
µA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Notes:
1. Repetitive rating,pulse width limited by junction temperature.
2. Pulse Test : Pulse width
≤
300µs, duty cycle
≤
2%.
3. These parameters have no way to verify.
www.cj-elec.com
2
D,Aug,2015
627/ 3DFNDJH 2XWOLQH 'LPHQVLRQV
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
627/ 6XJJHVWHG 3DG /D\RXW
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D,Aug,2015
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