JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC T
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SA1013
TRANSISTOR
(PNP)
1.
EMITTER
FEATURE
High Voltage:V
CEO
=-160V
Large Continuous Collector Current Capability
Complementary to 2SC2383
2.
COLLECTOR
3.
BASE
0$5.,1*
Equivalent Circuit
A1013
z
;;;
A101
'HYLFH FRGH
Solid
dot = Green molding compound device,
if none, the normal device
;;; &RGH
ORDERING INFORMATION
Part Number
2SA1013
2SA1013-TA
Package
TO-92L
TO-92L
Packing Method
Bulk
Tape
Pack Quantity
500pcs/Bag
2000pcs/Box
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-160
-160
-6
-1
0.9
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
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E,Aug,2017
(/(&75,&$/ &+$5$&7(5,67,&6
T
a
=25
unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test
conditions
Min
-160
-160
-6
-1
-1
60
320
-1.5
-0.75
15
35
V
V
MHz
pF
Max
Unit
V
V
V
μA
μA
I
C
=- 100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -10μA, I
C
=0
V
CB
=-150 V , I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-5 V, I
C
=- 200mA
I
C
= -500m A, I
B
= -50mA
I
C
= -5 mA, V
CE
=- 5V
V
CE
= -5 V, I
C
= -200mA
V
CB
=-10V, I
E
=0,f=1MHz
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
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2
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Typical Characteristics
-300
Static Characteristic
-1.0mA
COMMON
EMITTER
T
a
=25
℃
h
FE
600
h
FE
—— I
C
V
CE
= -5V
(mA)
-0.9mA
-200
I
C
COLLECTOR CURRENT
-0.7mA
-0.6mA
-0.5mA
-100
-0.4mA
-0.3mA
-0.2mA
I
B
=-0.1mA
DC CURRENT GAIN
-0.8mA
400
T
a
=100 C
o
200
T
a
=25 C
o
-0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
0
-1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
-100
I
C
(mA)
-1000
-1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
-400
V
CEsat
——
β=10
I
C
-1.0
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-300
-0.8
T
a
=25
℃
-0.6
-200
-0.4
T
a
=100
℃
-100
T
a
=100
℃
T
a
=25
℃
-0.2
-0.0
-1
-10
-100
-1000
-0
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
f
T
——
I
C
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
(MHz)
(pF)
80
T
a
=25 C
100
o
C
ib
f
T
TRANSITION FREQUENCY
40
CAPACITANCE
60
C
10
C
ob
20
V
CE
=-5V
T
a
=25 C
0
-0
-50
-100
-150
-200
-250
-300
-350
-400
1
-0.1
-1
-10
-20
o
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
V
BE
——
-1000
I
C
1.0
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
VCE=-5V
-0.9
-1.0
I
C
(mA)
0.8
-100
Ta=100 C
o
COLLECTOR CURRENT
0.6
-10
0.4
Ta=25
℃
-1
0.2
-0.1
-0.2
0.0
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
0
25
50
75
100
125
150
BASE-EMITTER VOLTAGE
V (V)
BE
AMBIENT TEMPERATURE
T
a
(
℃
)
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Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min.
Max.
3.750
4.050
1.280
1.580
0.380
0.550
0.620
0.780
0.350
0.450
4.750
5.050
4.000
7.850
8.150
1.270 TYP.
2.440
2.640
13.800
14.200
1.600
0.000
0.300
Dimensions In Inches
Min.
Max.
0.148
0.159
0.050
0.062
0.015
0.022
0.024
0.031
0.014
0.018
0.187
0.199
0.157
0.309
0.321
0.050 TYP.
0.096
0.104
0.543
0.559
0.063
0.000
0.012
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