JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate
MOSFETs
CJL2623
V
(BR)DSS
-30
V
Dual P-Channel MOSFET
SOT-23-6L
R
DS(on)
MAX
130mΩ
@
-10V
180mΩ
@
-4.5V
I
D
-3A
FEATURE
TrenchFET Power MOSFET
Low Gate Charge
Low On-resistance
Surface Mount Package
APPLICATION
DC/DC converter
Load switch for portable devices
Commercial-industrial applications
MARKING:
Equivalent Circuit
6
1
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note 1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Notes :
2.Per element must not be exceeded
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
-30
±20
-3
-20
0.35
357
150
-55~ 150
Unit
V
V
A
A
W
℃/W
℃
℃
1. Pulse width limited by Max.junction temperature.
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1
C,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Drain-source on-resistance
(note 3)
Forward tranconductance
Diode forward voltage
(note 3)
DYNAMIC PARAMETERS(note
4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(note 3,4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes :
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-24V,V
GS
=-4.5V,I
D
=-2A
0.5
1.4
V
DD
=-15V,V
GS
=-10V,I
D
=-1A
R
D
=15Ω,R
G
=3.3Ω
5
6
15
3
4.5
ns
ns
ns
ns
nC
nC
nC
C
iss
C
oss
C
rss
V
DS
=-25V,V
GS
=0V,f =1MHz
42
32
240
pF
pF
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
V
GS
= 0V, I
D
=-250µA
V
DS
=-30V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-3A
V
GS
=-4.5V, I
D
=-2A
V
DS
=-5V, I
D
=-2A
I
S
=-1A, V
GS
= 0V
2
-1.2
-1
-30
-1
±100
-3
130
180
V
µA
nA
V
mΩ
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
3. Pulse Test : Pulse width≤300μs, duty cycle≤2%.
4. Graranted by design，not subject to production testing.
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2
C,May,2015
Typical Characteristics
Output Characteristics
-20
-18
-12
Transfer Characteristics
V
DS
=-3.0V
V
GS
=-6V
-16
Pulsed
-10
(A)
-14
-12
-10
-8
(A)
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-4V
V
GS
=-3.5V
T
a
=25
℃
I
D
-8
T
a
=100
℃
I
D
DRAIN CURRENT
DRAIN CURRENT
-6
-4
-6
-4
-2
-0
-0
-1
-2
-3
-4
V
GS
=-3V
-2
-0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
160
150
140
——
I
D
800
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
700
(mΩ)
(mΩ)
130
120
110
100
90
80
70
60
50
40
30
20
-0
-1
-2
-3
-4
-5
600
R
DS(ON)
R
DS(ON)
V
GS
=-4.5V
500
I
D
=-2A
ON-RESISTANCE
ON-RESISTANCE
400
V
GS
=-10V
300
200
T
a
=100
℃
Pulsed
T
a
=25
℃
Pulsed
100
0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
-5
——
V
SD
-1.8
Threshold Voltage
-1.7
-1
(A)
V
TH
THRESHOLD VOLTAGE
(V)
-1.6
I
S
SOURCE CURRENT
I
D
=-250uA
-1.5
T
a
=100
℃
Pulsed
-0.1
T
a
=25
℃
Pulsed
-1.4
-1.3
-0.01
-0.0
-0.4
-0.8
-1.2
-1.6
-1.2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
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3
C,May,2015
SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
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C,May,2015
SOT-23-6L
Tape and Reel
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