JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA03N10
V
(BR)DSS
100
V
N-Channel MOSFET
R
DS(on)
MAX
140mΩ
@
10V
I
D
3A
SOT-89-3L
1. GATE
DESCRIPTION
The CJA03N10 uses advanced trench technology and design to
provide excellent R
DS(ON)
with low gate charge .This device is suitable for use
in a wide variety of applications.
FEATURES
Lead free product is acquired
Special process technology for high ESD capability
High density cell design for ultra low R
DS(on)
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
MARKING
2. DRAIN
3. SOURCE
APPLICATION
Power switching application
Hard switching and high frequency circuits
Uninterruptible power supply
Equivalent Circuit
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient
(note 2)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
100
±20
3
20
0.5
250
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
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MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 3)
Drain-source on-resistance
(note 3)
Forward transconductance
(note 3)
Diode forward voltage
(note 3)
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total gate charge
Gate-source Charge
Gate-drain Charge
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3.
Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting.
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=30V,V
GS
=10V,I
D
=3A
V
GS
=10V,V
DS
=30V,
R
GEN
=2.5Ω,
I
D
=2A,
R
L
=15Ω
11
7.4
35
9.1
15.5
3.2
4.7
ns
ns
ns
ns
nC
nC
nC
C
iss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,f =1MHz
690
120
90
pF
pF
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=100V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5A
V
DS
=5V, I
D
=2.9A
I
S
=3A, V
GS
= 0V
3
1.2
1
100
1
±100
2
140
V
µA
nA
V
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
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D,Apr,2015
Typical Characteristics
20
Output Characteristics
Pulsed
Transfer Characteristics
20
V
DS
=10V
Pulsed
V
GS
=10V
15
(A)
V
GS
=4V
3.5V
10
I
D
DRAIN CURRENT
DRAIN CURRENT
I
D
10
3V
5
(A)
15
T
a
=100
℃
5
V
GS
=2.5V
0
0
1
2
3
4
5
0
0.0
T
a
=25
℃
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
300
R
DS(ON)
——
Ta=25
℃
Pulsed
I
D
500
R
DS(ON)
——
V
GS
Ta=25
℃
Pulsed
(mΩ)
R
DS(ON)
200
R
DS(ON)
VGS=10V
ON-RESISTANCE
VGS=2.5V
(mΩ)
250
400
300
ON-RESISTANCE
150
200
I
D
=5A
100
100
50
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
3
6
9
12
15
18
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
10
I
S
—— V
SD
Ta=25
℃
Pulsed
Threshold Voltage
1.9
I
S
(A)
V
TH
THRESHOLD VOLTAGE
0.1
1.7
SOURCE CURRENT
(V)
1
1.8
I
D
=250uA
0.01
1.6
1E-3
1.5
1E-4
400
500
600
700
800
900
1000
1100
1200
1.4
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(mV)
JUNCTION TEMPERATURE
T
J
(
℃
)
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D,Apr,2015
SOT-89-3L Package Outline Dimensions
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
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D,Apr,2015
SOT-89-3L Tape and Reel
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