JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC T
S9012
FEATURES
SOT-23 Plastic-Encapsulate Transistors
SOT–23
TRANSISTOR (PNP)
High Collector Current
Complementary To S9013
Excellent h
FE
Linearity
1. BASE
MARKING: 2T1
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-500
300
416
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
Min
-40
-25
-5
-0.1
-0.1
-0.1
120
400
-0.6
-1.2
150
5
V
V
MHz
pF
Typ
Max
Unit
V
V
V
uA
uA
uA
I
C
=-0.1mA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-0.1mA, I
C
=0
V
CB
=-40V, I
E
=0
V
CE
=-20V, I
B
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-50mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-6V,I
C
=-20mA, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE
RANK
RANGE
L
120-200
H
200-350
J
300-400
www.cj-elec.com
1
C,Oct,2014
A,Jun,2014
Typical Characteristics
-100
Static Characteristic
-400uA
COMMON
EMITTER
Ta=25
℃
h
FE
400
h
FE
——
I
C
COMMON EMITTER
VCE=-1V
(mA)
-80
-350uA
-300uA
-250uA
Ta=100
℃
300
I
C
COLLECTOR CURRENT
-60
-200uA
-150uA
DC CURRENT GAIN
Ta=25
℃
200
-40
-100uA
-20
100
I
B
=-50uA
-0
-0
-4
-8
-12
-16
-20
0
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
-1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-100
Ta=100
℃
Ta=25
℃
-0.8
Ta=100
℃
Ta=25
℃
-10
-0.4
β=10
-1
-1
-10
-100
-500
-0.0
-1
-10
-100
β=10
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
500
f
T
—— I
C
VCE=-6V
o
Ta=25 C
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25
℃
(MHz)
Cib
(pF)
TRANSITION FREQUENCY
f
T
Cob
10
100
-5
-10
-100
CAPACITANCE
C
1
-0.1
-1
-10
-20
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
400
Pc
——
Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta
(
℃
)
www.cj-elec.com
2
C,Oct,2014
A,Jun,2014
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
www.cj-elec.com
3
C,Oct,2014
A,Jun,2014
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