JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate MOSFETS
CJ3134K
V
(BR)DSS
20
V
N-Channel MOSFET
R
DS(on)
MAX
380mΩ
@
4.5V
450mΩ
@
2.5V
800mΩ
@
1.8V
I
D
0.75A
SOT-723
1. GATE
2. SOURCE
3. DRAIN
FEATURES
Lead Free Product is Acquired
Surface Mount Package
N-Channel Switch with Low R
DS
(on)
Operated at Low Logic Level Gate Drive
MARKING
APPLICATION
Load/Power Switching
Interfacing Switching
Battery Management for Ultra Small Portable Electronics
Logic Level Shift
Equivalent Circuit
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Typical
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current
(t
p
=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
T
L
Value
20
±12
0.75
1.8
150
833
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
,2013
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1
E,Aug,2015
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 2)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=250µA
V
DS
=20V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=0.65A
Drain-source on-resistance
(note 2)
R
DS (on)
V
GS
=2.5V, I
D
=0.55A
V
GS
=1.8V, I
D
=0.45A
Forward transconductance
(note 2)
Diode forward voltage
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
(note 3)
Turn-on rise time
(note 3)
Turn-off delay time
(note3)
Turn-off fall time
(note 3)
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2.
Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
t
d(on)
t
r
t
d(off)
t
f
V
GS
=4.5V,V
DS
=10V,
I
D
=500mA,R
GEN
=10Ω
6.7
4.8
17.3
7.4
ns
ns
ns
ns
C
iss
C
oss
C
rss
V
DS
=16V,V
GS
=0V,f =1MHz
79
13
9
120
20
15
pF
pF
pF
g
FS
V
SD
V
DS
=10V, I
D
=0.8A
I
S
=0.15A, V
GS
= 0V
0.35
0.54
270
320
390
1.6
1.2
20
1
±20
1.1
380
450
800
V
µA
µA
V
m
Ω
m
Ω
m
Ω
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
B Dec,2013
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2
E,Aug,2015
Typical Characteristics
Output Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
4.0
Transfer Characteristics
V
DS
=3V
V
GS
=3V
V
GS
=2.5V
3.5
T
a
=25
℃
Pulsed
V
GS
=4V,5V
Pulsed
(A)
I
D
(A)
3.0
2.5
I
D
T
a
=25
℃
DRAIN CURRENT
V
GS
=2V
DRAIN CURRENT
T
a
=100
℃
2.0
1.5
1.0
V
GS
=1.5V
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
500
800
R
DS(ON)
—— V
GS
Pulsed
700
T
a
=25
℃
Pulsed
450
(m
)
(m
)
V
GS
=1.8V
400
I
D
=0.65A
600
R
DS(ON)
R
DS(ON)
ON-RESISTANCE
500
ON-RESISTANCE
350
V
GS
=2.5V
300
T
a
=100
℃
400
V
GS
=4.5V
250
300
200
T
a
=25
℃
200
0.1
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1
2
3
4
5
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
2
0.8
Threshold Voltage
Pulsed
1
0.7
I
S
(A)
V
TH
(V)
0.6
THRESHOLD VOLTAGE
I
D
=250uA
0.5
SOURCE CURRENT
0.1
T
a
=100
℃
T
a
=25
℃
0.4
0.3
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
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E,Aug,2015
SOT-723 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
E1
e
θ
Dimensions In Millimeters
Min.
Max.
0.430
0.500
0.000
0.050
0.170
0.270
0.270
0.370
0.080
0.150
1.150
1.250
1.150
1.250
0.750
0.850
0.800TYP.
7° REF.
Dimensions In Inches
Min.
Max.
0.017
0.020
0.000
0.002
0.007
0.011
0.011
0.015
0.003
0.006
0.045
0.049
0.045
0.049
0.030
0.033
0.031TYP.
7° REF.
SOT-723 Suggested Pad Layout
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SOT-723 Tape and Reel
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