JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ9435
V
(BR)DSS
-30V
P-Channel Power MOSFET
R
DS(on)
MAX
60
mΩ@-10V
70
mΩ@-6V
105
mΩ@-4.5V
I
D
-5.1A
SOP8
DESCRIPTION
The
CJQ9435
uses advanced trench technology to provide excellent
R
DS(ON)
, shoot-through immunity, body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a low side switch in Notebook
CPU core power conversion.
APPLICATIONS
Battery Switch
Load Switch
MARKING:
Q9435=
Device code
YY=Date
Code
Solid dot =
Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
D
8
7
D
6
D
5
D
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( T
a
=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E
AS
condition: V
DD
=-50V,L=0.5mH, R
G
=25Ω, Starting T
J
= 25°C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
(1)
Limit
-30
±20
-5.1
-20
20
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
P
D
R
θJA
T
J
T
stg
T
L
ZZZFMHOHFFRP
1
IMar6
026)(7 (/(&75,&$/ &+$5$&7(5,67,&6
T
a
=25
unless otherwise specified
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note1)
Gate-threshold voltage
Symbol
Test Condition
Min
Typ
Max
Unit
V
(BR) DSS
I
DSS
I
GSS
V
GS
= 0V, I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
-30
-1
±100
V
µA
nA
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.6A
-1.0
-1.5
50
60
65
-2.0
60
70
105
V
mΩ
m
Ω
m
Ω
S
Static drain-source on-sate resistance
R
DS(on)
V
GS
=-6V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-2A
Forward transconductance
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gate Resistance
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
Notes:
1.
2.
g
FS
V
DS
=-15V, I
D
=-4.6A
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f =1MHz, V
DS
=0V,
V
GS
=0V,
5.8
V
DD
=-15V,I
D
=-1A,
V
GS
=-10V,R
G
=6Ω,
R
L
=15Ω
V
DS
=-15V, V
GS
=-10V,
I
D
=-4.6A
4
6.3
40
nC
30
60
120
100
Ω
ns
V
SD
I
S
I
SM
V
GS
=0V, I
S
=-2.6A
-1.2
-5.1
-20
V
A
A
Pulse Test : Pulse Width≤300µs, duty cycle
≤2%.
Guaranteed by design, not subject to production testing.
ZZZFMHOHFFRP
2
IMar6
Output Characteristics
-20
Transfer Characteristics
-5
T
a
=25
℃
Pulsed
V
GS
=-10
、
-5.0
、
-4.5
、
-4.0V
T
a
=25
℃
Pulsed
V
GS
=-3.5V
-15
-4
(A)
(A)
-3
-10
I
D
DRAIN CURRENT
DRAIN CURRENT
-5
V
GS
=-3.0V
I
D
-5
-0
-0
-1
-2
-3
-4
-2
-1
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
100
——
I
D
T
a
=25
℃
Pulsed
180
R
DS(ON)
—— V
GS
T
a
=25
℃
Pulsed
150
(m
Ω
)
V
GS
=-4.5V
R
DS(ON)
R
DS(ON)
V
GS
=-10V
ON-RESISTANCE
60
(m
Ω
)
120
90
80
ON-RESISTANCE
I
D
=-4.1A
40
60
20
-0
-2
-4
-6
-8
-10
30
-2
-4
-6
-8
-10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
-10
——
V
SD
T
a
=25
℃
Pulsed
-1
(A)
SOURCE CURRENT
I
S
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
ZZZFMHOHFFRP
3
IMar6
SOP8 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
e
E
E1
L
θ
Dimensions In Millimeters
Min
1.350
Max
1.750
Dimensions In Inches
Min
0.053
Max
0.069
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.800
5.000
1.270（BSC）
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.004
0.010
0.053
0.061
0.013
0.020
0.007
0.010
0.189
0.197
0.050（BSC）
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
SOP8 Suggested Pad Layout
www.cj-elec.com
4
I,Mar,2016
SOP8
Tape and Reel
Dimensions are in millimeter
Reel Option
13''Dia
D
Ø330.00
D1
100.00
D2
13.00
G
R151.00
H
R56.00
I
R6.50
W1
12.40
W2
17.60
REEL
4,000 pcs
Reel Size
13 inch
Box
8,000 pcs
Box Size(mm)
360×360×65
Carton
64,000 pcs
Carton Size(mm)
565×380×390
G.W.(kg)
www.cj-elec.com
5
I,Mar,2016
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
