JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BCX54,BCX55,BCX56
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
PNP Complements to BCX51,BCX52,BCX53
Low Voltage
High Current
APPLICATIONS
Driver Stages of Audio Amplifiers
MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD
BCX55:BE, BCX55-10:BG, BCX55-16BM
BCX56:B H, BCX56-10:BK, BCX56-16:BL
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
Parameter
BCX54
Collector-Base Voltage
BCX55
BCX56
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Emitter Voltage
BCX54
BCX55
BCX56
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
60
100
45
60
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
C,Apr,2012
*
Pulse Test
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
T est
conditions
BCX54
BCX55
BCX56
BCX54
Min
45
60
100
45
60
80
5
Typ
Max
Unit
V
I
C
=100µA,I
E
=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
V
(BR)CEO*
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
V
CE(sat)*
V
BE*
f
T
I
C
=10mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=0.5A
I
C
=0.5A,I
B
=50mA
V
CE
=2V, I
C
=0.5A
BCX55
BCX56
V
V
0.1
0.1
µA
µA
40
63
25
0.5
1
130
V
V
MHz
250
V
CE
=5V,I
C
=10mA, f=100MHz
CLASSIFICATION OF
h
FE(2)
BCX54
RANK
RANGE
BCX55
BCX56
63–250
BCX54-10
BCX55-10
BCX56-10
63–160
BCX54-16
BCX55-16
BCX56-16
100–250
C,Apr,2012
Typical Characteristics
250
BCX54,BCX55,BCX56
1000
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
——
I
C
COMMON EMITTER
V
CE
=2V
(mA)
200
1.0mA
0.9mA
300
I
C
T
a
=100
℃
T
a
=25
℃
COLLECTOR CURRENT
150
0.7mA
0.6mA
100
DC CURRENT GAIN
0.8mA
100
0.5mA
0.4mA
50
0.3mA
0.2mA
I
B
=0.1mA
30
0
0
1
2
3
4
5
10
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
β=10
——
I
C
1.0
V
BEsat
β=10
——
I
C
COLLECTOR-EMMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
100
T
a
=100
℃
T
a
=25
℃
30
0.6
T
a
=100
℃
10
1
10
100
1000
0.4
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
1000
I
C
COMMON EMITTER
V
CE
=2V
——
V
BE
300
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
(mA)
100
C
ib
100
COLLECTOR CURRENT
C
(pF)
I
C
T
a
=100
℃
CAPACITANCE
C
ob
10
10
T
a
=25
℃
1
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE BIAS VOLTAGE
V
(V)
500
f
T
——
I
C
600
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
100
500
f
T
TRANSITION FREQUENCY
400
100
300
200
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
10
10
100
0
0
25
50
75
100
125
150
30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
C,Apr,2012
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