JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3439KDW
V
(BR)DSS
20
V
N channel+P Channel MOSFET
R
DS(on)
MAX
380mΩ
@
4.5V
450mΩ
@
2.5V
520mΩ
@
-4.5V
700mΩ
@
-2.5V
-0.66A
800mΩ
@
1.8V
0.75A
I
D
SOT-363
-20
V
950mΩ(TYP)
@
-1.8V
FEATURE
Surface Mount Package
Low R
DS
(on)
Operated at Low Logic Level Gate Drive
ESD Protected Gate
Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
MARKING
APPLICATION
Load/ Power Switching
Interfacing Switching
Battery Management for Ultra Small Portable Electronics
Logic Level Shift
Equivalent Circuit
D1
6
G2
5
S2
4
1
S1
2
G1
3
D2
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Typical
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Typical
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient
(note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
R
θJA
T
J
T
STG
T
L
833
150
-55~+150
260
℃/W
℃
℃
℃
V
DS
V
GS
I
D
I
DM
-20
±12
-0.66
-1.2
V
V
A
A
V
DS
V
GS
I
D
I
DM
20
±12
0.75
1.8
V
V
A
A
Symbol
Value
Unit
www.cj-elec.com
1
D,Mar,2016
MOSFET ELECTRICAL CHARACTERISTICS
N-ch MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 2)
Drain-source on-resistance(note
2)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
=250µA
V
DS
=20V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=0.65A
V
GS
=2.5V, I
D
=0.55A
V
GS
=1.8V, I
D
=0.45A
Forward tranconductance(note
2)
Diode forward voltage
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=4.5V,V
DS
=10V,
I
D
=500mA,R
GEN
=10Ω
V
DS
=16V,V
GS
=0V,f =1MHz
79
13
9
6.7
4.8
17.3
7.4
120
20
15
pF
pF
pF
ns
ns
ns
ns
g
FS
V
SD
V
DS
=10V, I
D
=0.8A
I
S
=0.15A, V
GS
= 0V
1.6
1.2
0.35
20
1
±20
1.1
380
450
800
V
µA
uA
V
mΩ
mΩ
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (note 3,4)
P-ch MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 2)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
=-250µA
V
DS
=-20V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-1A
V
GS
=-2.5V, I
D
=-0.8A
V
GS
=-1.8V, I
D
=-0.5A
Forward tranconductance(note
2)
Diode forward voltage
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle≤2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by design，not subject to producting.
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=-4.5V,V
DS
=-10V,
I
D
=-200mA,R
GEN
=10Ω
V
DS
=-16V,V
GS
=0V,f =1MHz
113
15
9
9
5.8
32.7
20.3
170
25
15
pF
pF
pF
ns
ns
ns
ns
g
FS
V
SD
V
DS
=-10V, I
D
=-0.54A
I
S
=-0.5A, V
GS
= 0V
950
1.2
-1.2
-0.35
-20
-1
±20
-1.1
520
700
V
µA
uA
V
mΩ
mΩ
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-source on-resistance(note
2)
SWITCHING CHARACTERISTICS (note 3, 4)
www.cj-elec.com
2
D,Mar,2016
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
