JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC T
MMBT3904
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT–23
FEATURES
Complementary to MMBT3906
MARKING:1AM
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter
saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
t
d
t
r
t
s
t
f
Test
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CE
=30V, V
EB(off)
=3V
V
CB
= 60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V,I
C
=10mA, f=100MHz
V
CC
=3V, V
BE(off)
=-0.5V I
C
=10mA,
I
B1
=1mA
V
CC
=3V, V
BE(off)
=-0.5V I
C
=10mA,
I
B1
=1mA
V
CC
=3V, I
C
=10mA, I
B1
= I
B2
=1mA
V
CC
=3V, I
C
=10mA, I
B1
= I
B2
=1mA
300
35
35
200
50
100
60
30
0.3
0.95
V
MHz
ns
ns
ns
ns
V
conditions
Min
60
40
6
50
100
100
300
Typ
Max
Unit
V
V
V
nA
nA
nA
CLASSIFICATION OF h
FE(1)
HFE
RANK
RANGE
L
100–200
100-300
H
200–300
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1
E,May,2015
A,Jun,2014
Typical Characteristics
100
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
400
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
(mA)
80
500uA
450uA
400uA
350uA
300
T
a
=100
℃
I
C
COLLECTOR CURRENT
60
300uA
250uA
DC CURRENT GAIN
200
T
a
=25
℃
40
200uA
150uA
100
20
100uA
I
B
=50uA
0
0
4
8
12
16
20
0
0.1
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
600
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.8
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.4
30
β=10
10
1
3
10
30
100
200
0.0
1
3
10
30
100
β=10
300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=1V
—— V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
30
10
COLLECTOR CURRENT
CAPACITANCE
C
(pF)
I
C
T
a
=100
℃
C
ib
T
a
=25
℃
3
3
C
ob
1
T
a
=25
℃
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.3
1
3
10
20
BASE-EMITTER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
V
CE
=20V
T
a
=25
℃
—— I
C
250
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
TRANSITION FREQUENCY
f
T
200
150
100
50
100
1
3
10
30
60
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
www.cj-elec.com
2
E,May,2015
A,Jun,2014
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
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3
E,May,2015
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