JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2321
V
(BR)DSS
-20
V
P-Channel 20-V(D-S) MOSFET
R
DS(on)
MAX
57mΩ
@
-4.5V
76mΩ
@
-2.5V
110mΩ
@
-1.8V
I
D
-2.9A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
PA Switch
Load Switch
MARKING
Equivalent Circuit
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
R
θJA
T
J
T
stg
Value
-20
±12
-2.9
-12
-0.59
0.35
357
150
-50 ~+150
W
℃/W
℃
A
Unit
V
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E,May,2016
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source leakage
Zero Gate voltage drain current
Gate-source threshold voltage
V
(BR) DSS
I
GSS
I
DSS
V
GS(th)
V
GS
= 0V, I
D
=-10µA
V
DS
=0V, V
GS
=±12V
V
DS
=-16V, V
GS
=0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-3.3A
Drain-source on-state resistance
R
DS(on)
V
GS
=-2.5V, I
D
=-2.8A
V
GS
=-1.8V, I
D
=-2.3A
Forward tranconductance
Forward diode voltage
Dynamic
Input capacitance
a,b
Output capacitance
a,b
Reverse transfer capacitance
a,b
Total Gate charge
a
Symbol
Test Condition
Min
-20
Typ
Max
Unit
V
±100
-1.0
-0.4
-0.9
0.057
0.076
0.110
3
-1.2
nA
µA
V
Ω
g
fS
V
SD
V
DS
=-5V, I
D
=-3.3A
V
GS
=0V,I
S
=-1.6A
S
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GEN
=-4.5V,V
DD
=-6V,
I
D
=-1.0A,R
G
=6Ω, R
L
=6Ω
V
DS
=-6V,V
GS
=-4.5V,I
D
=-3.3A
V
DS
=-6V,V
GS
=0V,f =1MHz
715
170
120
13
1.2
2.2
nc
nc
nc
pF
Gate-Source charge
a
Gate-Drain charge
Switching
a,b
Turn-on delay Time
Rise time
Turn-off delay time
Fall time
Notes :
a
25
55
90
60
ns
a. Pulse Test : pulse width
≤300µs,
duty cycle
≤2%.
. These parameters have no way to verify.
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E,May,2016
Typical Characteristics
-16
Output Characteristics
T
a
=25
℃
Pulsed
V
GS
=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
V
GS
=-2.0V
-10
Transfer Characteristics
T
a
=25
℃
Pulsed
-8
(A)
-12
I
D
I
D
-6
-8
DRAIN CURRENT
DRAIN CURRENT
-4
(A)
-4
V
GS
=-1.5V
-4
-2
V
GS
=-1.0V
-0
-0
-1
-2
-3
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
300
R
DS(ON)
——
T
a
=25
℃
Pulsed
I
D
500
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
250
(m
Ω
)
400
R
DS(ON)
R
DS(ON)
ON-RESISTANCE
V
GS
=-1.8V
200
(m
Ω
)
300
150
200
100
ON-RESISTANCE
V
GS
=-2.5V
50
I
D
=-3.3A
100
V
GS
=-4.5V
0
-0
-2
-4
-6
-8
-10
-12
0
-0
-2
-4
-6
-8
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
-20
I
S
—— V
SD
T
a
=25
℃
Pulsed
-10
I
S
(A)
SOURCE CURRENT
-3
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
ZZZFMHOHFFRP
3
E,May,2016
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
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SOT-23 Tape and Reel
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