JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
MMBT3904M
FEATURE
Complementary to MMBT3906M
Small Package
MARKING: 1N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage
Temperature
Value
60
40
6
0.2
0.1
1250
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (NPN)
SOT-723
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
C
ib
NF
t
d
t
r
t
s
t
f
Test conditions
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CE
=30V,V
EB(off)
=3V
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=20V,I
C
=10mA,f=100MHz
V
CB
=5V,I
E
=0,f=1MHz
V
EB
=0.5V,I
C
=0,f=1MHz
V
CE
=5V,I
C
=0.1mA,f=1MHz,R
S
=1kΩ
V
CC
=3V,V
BE(off
)
=-0.5V,
I
C
=10mA,I
B1
=1mA
V
CC
=3V,I
C
=10mA
I
B1
=I
B2
=1mA
300
4
8
5
35
35
200
50
0.65
40
70
100
60
0.2
0.3
0.85
0.95
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
300
Min
60
40
6
50
100
Typ
Max
Unit
V
V
V
nA
nA
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1
D,Aug,2015
Typical Characteristics
100
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
400
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
(mA)
80
500uA
450uA
400uA
350uA
300
T
a
=100
℃
I
C
COLLECTOR CURRENT
60
300uA
250uA
DC CURRENT GAIN
200
T
a
=25
℃
40
200uA
150uA
100
20
100uA
I
B
=50uA
0
0
4
8
12
16
20
0
0.1
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
600
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.8
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.4
30
β=10
10
1
3
10
30
100
200
0.0
1
3
10
30
100
β=10
300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=1V
—— V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
30
10
COLLECTOR CURRENT
CAPACITANCE
C
(pF)
I
C
T
a
=100
℃
C
ib
T
a
=25
℃
3
3
C
ob
1
T
a
=25
℃
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
V
CE
=20V
T
a
=25
℃
—— I
C
200
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
1
10
150
TRANSITION FREQUENCY
f
T
200
100
50
100
3
30
60
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
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2
D,Aug,2015
SOT-723 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
E1
e
θ
Dimensions In Millimeters
Min.
Max.
0.430
0.500
0.000
0.050
0.170
0.270
0.270
0.370
0.080
0.150
1.150
1.250
1.150
1.250
0.750
0.850
0.800TYP.
7° REF.
Dimensions In Inches
Min.
Max.
0.017
0.020
0.000
0.002
0.007
0.011
0.011
0.015
0.003
0.006
0.045
0.049
0.045
0.049
0.030
0.033
0.031TYP.
7° REF.
SOT-723 Suggested Pad Layout
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3
D,Aug,2015
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