JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU20N06
V
(BR)DSS
60V
N-Channel Power MOSFET
R
DS(on)
MAX
45mΩ@
10V
I
D
20A
TO-252-2L
GENERAL DESCRIPTION
The CJU20N06 uses advanced trench technology and design to
provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications.
FEATURE
High density cell design for ultra low R
dson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
MARKING:
CJU20N06=
Device code
Solid
dot = Green molding compound device,
if none, the normal device
XXX
=Date Code
1. GATE
2. DRAIN
3. SOURCE
Equivalent Circuit
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
(1)
Value
60
±20
20
60
72
1.25
100
150
-55~+150
Unit
V
A
mJ
W
℃/W
℃
P
D
R
θJA
T
J
T
stg
(1).E
AS
condition: T
j
=25℃,V
DD
=30V,L=0.5mH, R
G
=25Ω, Starting T
J
= 25°C
www.cj-elec.com
1
A,Mar,2016
T
a
=25
unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics (note1)
Gate-threshold voltage
Static drain-source on-resistance
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
Notes:
1.
2.
Pulse Test : Pulse Width≤300µs, duty cycle
≤2%.
Guaranteed by design, not subject to production.
V
SD
I
S
I
SM
V
GS
=0V, I
S
=20A
1.2
20
60
V
A
A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=48V, V
GS
=10V,
I
D
=15A
12
4.1
4.5
5
2.6
16.1
2.3
ns
nC
C
iss
C
oss
C
rss
V
DS
=30V,V
GS
=0V,
f =1MHz
500
60
25
pF
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=20A
1
2
37
3
45
V
mΩ
V
(BR) DSS
I
DSS
I
GSS
V
GS
= 0V, I
D
=250µA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
60
1
±100
V
µA
nA
V
DD
=30V,I
D
=2A,
V
GS
=10V,R
G
=3Ω,
R
L
=6.7Ω
www.cj-elec.com
2
A,Mar,2016
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